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Aluminum oxide film forming method and sputtering device

A film forming method, aluminum oxide technology, applied in sputtering plating, ion implantation plating, coating, etc., can solve the problems of slow film forming speed, not suitable for mass production, poor production efficiency, etc., and achieve film forming speed high speed effect

Inactive Publication Date: 2017-04-12
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the film formation speed of the ALD method is extremely slow and the production efficiency is poor, so there is a problem that it is not suitable for mass production
In addition, in the PE-CVD method, since a flammable liquid TMD (trimethylaluminum) solution is used, there are problems requiring careful attention in device design and use of raw materials

Method used

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  • Aluminum oxide film forming method and sputtering device
  • Aluminum oxide film forming method and sputtering device
  • Aluminum oxide film forming method and sputtering device

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Embodiment Construction

[0051] Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same reference numerals are attached to parts having the same structure and function, and repeated explanations will be omitted in the following description. In addition, each drawing is only a figure shown schematically, For example, the dimension, positional relationship, etc. of the thing shown in each drawing are not always shown accurately. In addition, in some of the drawings, XYZ orthogonal coordinate axes are added to illustrate directions. The direction of the Z axis among these coordinate axes indicates the direction of the vertical line, and the XY plane is the horizontal plane.

[0052]

[0053]

[0054] figure 1 It is a figure which exemplifies the schematic structure of the main part of the sputtering apparatus 10 for realizing the aluminum oxide film-forming method of embodiment. figure 2 It is a side view showing an example of the hig...

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Abstract

The invention provides a method for forming an aluminum oxide film, and the aluminum oxide film is formed through a sputtering method at a stable oxidizability and high speed of film forming. The method provided by the invention comprises a first plasma generation step which enables plasma to be generated in a vacuum container containing sputtering gas and reactant gas; a second plasma generation step which enables a sputtering voltage to an aluminum target and enables magnetic control plasma to be generated through a static magnetic field; and a control step which achieves the control of the flow of the reactant gas into the vacuum container. Moreover, the constant-voltage control of the sputtering voltage is achieved in the second plasma generation step. In the control step, the flow of thee reactant gas is controlled in the second plasma generation step, so as to enable a sputtering current value to be a targeted current value. The first plasma generation step is a step of at least enabling high-frequency inductive coupling plasma to be generated in the second plasma generation step through employing a high-frequency antenna consisting of a conductor with the number of turns being one less.

Description

technical field [0001] The invention relates to a film-forming technology based on a reactive sputtering method for aluminum oxide used in a passivation film of a silicon substrate of a solar cell. Background technique [0002] In recent years, along with the high efficiency of solar cells, there is a need for an effective passivation film on the surface of p-type silicon. Moreover, with regard to the p-type surface of the silicon wafer, the SiN with positive charge x Not to mention having a suitable electric field effect, ideally a film with a negative charge is required. [0003] It is known that aluminum oxide (Al 2 o 3 ). In addition, conventionally, ALD method or PE-CVD method has been used in order to utilize aluminum oxide as a passivation film. However, the film formation rate of the ALD method is extremely slow and the production efficiency is poor, so there is a problem that it is not suitable for mass production. In addition, in the PE-CVD method, since a fl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/54
CPCY02P70/50C23C14/0036C23C14/081C23C14/3492C23C14/35Y02E10/50
Inventor 尾崎一人
Owner DAINIPPON SCREEN MTG CO LTD
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