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A kind of mechanical thinning method of grinding wafer transmission electron microscope sample

A transmission electron microscope and wafer technology, applied in the field of material analysis and semiconductor manufacturing, can solve the problems of fragility and achieve the effect of simple operation steps

Active Publication Date: 2016-07-06
TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention proposes a mechanical thinning method of a ground wafer transmission electron microscope sample to solve the fragile problem of the mechanical pre-thinning process of a large-size ground wafer electron transmission microscope section sample

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  • A kind of mechanical thinning method of grinding wafer transmission electron microscope sample
  • A kind of mechanical thinning method of grinding wafer transmission electron microscope sample
  • A kind of mechanical thinning method of grinding wafer transmission electron microscope sample

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Embodiment Construction

[0026] The specific implementation steps of the present invention will be described in detail below in conjunction with the accompanying drawings

[0027] figure 1 It is a schematic diagram of the surface of the wafer after cutting. During the slicing process, the blue film is pasted on the front of the wafer to protect the wafer. The cutting direction is parallel and perpendicular to the crystal direction of the wafer. Use the X and Y directions of the slicer to translate and feed Function: Cut the wafer into square samples with a size of 2-2.3mm×2-2.3mm; take the adjacent cutting sample 101 at the crystal direction on the edge of the wafer, perform ultrasonic cleaning for 2-3 minutes, and then dry naturally Afterwards, the grinding surface of the sampled block 101 was bonded with M-BOND610 glue.

[0028] figure 2 It is a schematic diagram of the pressurized fixture, pull the handle 202 to place the bonded sample into the sample resting groove 204, then release the handl...

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Abstract

The invention provides a method for mechanically thinning a transmission electron microscope sample of a grinding wafer. It includes the following steps: provide a ground wafer, use the precise positioning and cutting function of the wafer slicer to cut the wafer into square samples with a size of 2-2.3mm×2.3mm; take the adjacent <110> crystal direction Ultrasonic cleaning was performed on the two samples, and the samples were taken out and allowed to dry naturally, and then the grinding surfaces of the two samples were glued together to make a sample, and the sample was cured under pressure at 100°C; after the sample was cured, Carry out resin mounting to form an embedded body, and stick the embedded body to the center of the steel cylindrical platform after the resin is cured; successively thin the embedded body on both sides with coarse and fine sandpaper, and then perform sufficient polishing, when the thickness reaches 80- At 90 μm, the pits and ion thinning are finally obtained to obtain the lens observation sample.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing and the field of material analysis, in particular to a method for making a transmission electron microscope (TEM) sample. Background technique [0002] Silicon wafers are the main semiconductor base material, and currently 90% of semiconductor components are based on silicon wafers. However, the initial thickness of the wafer is relatively large. At present, the initial thickness of the 200mm wafer is about 730μm, and the thickness of the 300mm wafer will be even greater. The thickness of the wafer cannot meet the requirements of packaging, so the wafer needs to be thinned mechanically. At present, the mainstream technology for wafer thinning is wafer spin grinding technology, however, the grinding process inevitably brings damage to the wafer surface / subsurface. Grinding damage will cause warpage of the wafer, reduce the strength of the wafer, increase the difficulty of wafer...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/32
Inventor 秦飞孙敬龙安彤王仲康唐亮
Owner TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV