Method for mechanically thinning grinding wafer transmission electron microscope test sample
A technology of transmission electron microscope and wafer, applied in the field of material analysis and semiconductor manufacturing, can solve problems such as fragility, and achieve the effect of simple operation steps
Active Publication Date: 2014-10-01
TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV
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[0003] The present invention proposes a mechanical thinning method of a ground wafer transmission electron microscope sample to solve the fragile problem of the mechanical pre-thinning process of a large-size ground wafer electron transmission microscope section sample
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[0026] The specific implementation steps of the present invention will be described in detail below in conjunction with the accompanying drawings
[0027] figure 1 It is a schematic diagram of the surface of the wafer after cutting. During the slicing process, the blue film is pasted on the front of the wafer to protect the wafer. The cutting direction is parallel and perpendicular to the crystal direction of the wafer. Use the X and Y directions of the slicer to translate and feed Function: Cut the wafer into square samples with a size of 2-2.3mm×2-2.3mm; take the adjacent cutting sample 101 at the crystal direction on the edge of the wafer, perform ultrasonic cleaning for 2-3 minutes, and then dry naturally Afterwards, the grinding surface of the sampled block 101 was bonded with M-BOND610 glue.
[0028] figure 2 It is a schematic diagram of the pressurized fixture, pull the handle 202 to place the bonded sample into the sample resting groove 204, then release the handl...
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Abstract
The invention provides a method for mechanically thinning a grinding wafer transmission electron microscope test sample. The method comprises the following steps: supplying a grinding wafer, cutting the wafer into square sample blocks with the sizes of 2-2.3mm*2.3mm through the precise positioning and cutting functions of a wafer slicing machine; performing ultrasonic cleaning on two adjacent sample blocks at the <100> crystal orientation, and taking out the sample blocks for natural drying; adhering the grinding surfaces of the two sample blocks oppositely to prepare the test sample, and performing pressurization curing on the test sample at 100 DEG C; embedding the cured test sample in resin to form an embedded body, and adhering the embedded body to the center of a steel cylindrical table after resin is cured; thinning two surfaces of the embedded body through thick sand paper and thin sand paper in sequence, performing full polishing, and when the thickness is 80-90 microns, performing concave pit and ion thinning to finally obtain the transmission electron microscope observation test sample.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing and the field of material analysis, in particular to a method for making a transmission electron microscope (TEM) sample. Background technique [0002] Silicon wafers are the main semiconductor base material, and currently 90% of semiconductor components are based on silicon wafers. However, the initial thickness of the wafer is relatively large. At present, the initial thickness of the 200mm wafer is about 730μm, and the thickness of the 300mm wafer will be even greater. The thickness of the wafer cannot meet the requirements of packaging, so the wafer needs to be thinned mechanically. At present, the mainstream technology for wafer thinning is wafer spin grinding technology, however, the grinding process inevitably brings damage to the wafer surface / subsurface. Grinding damage will cause warpage of the wafer, reduce the strength of the wafer, increase the difficulty of wafer...
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IPC IPC(8): G01N1/32
Inventor 秦飞孙敬龙安彤王仲康唐亮
Owner TIANJIN RES INST FOR ADVANCED EQUIP TSINGHUA UNIV