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Method for Strengthening Wire Soldering Points of Semiconductor Devices

A welding point and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as product electrical parameters, functional failure, badness, failure, etc.

Active Publication Date: 2017-01-04
NANTONG FUJITSU MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the high internal temperature of the device when the power product is working, and sometimes the external working environment is relatively harsh, the welding reliability between the aluminum wire 4 and the lead wire 3 in the frame is required to be relatively high. Due to thermal stress, moisture, fluctuations in process quality control, etc., the aluminum wire 4 and the lead wire 3 in the frame will be peeled off, resulting in failure of the electrical parameters and functions of the product
In response to this failure, although the industry has improved welding reliability through bonding parameters, steel nozzle structure, materials, process layered control, etc., sometimes there will be a failure between the aluminum wire 4 and the lead wire in the frame, and subsequent improvements will be made. Process conditions are relatively limited

Method used

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  • Method for Strengthening Wire Soldering Points of Semiconductor Devices
  • Method for Strengthening Wire Soldering Points of Semiconductor Devices
  • Method for Strengthening Wire Soldering Points of Semiconductor Devices

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Embodiment Construction

[0021] Embodiments of the present invention will be described below with reference to the drawings. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. It should be noted that representation and description of components and processes that are not related to the present invention and known to those of ordinary skill in the art are omitted from the drawings and descriptions for the purpose of clarity.

[0022] like image 3 As shown, the wire bonding point strengthening method of the semiconductor device provided by the embodiment of the present invention, the wire 4 is welded in the welding area on the surface of the lead 3 in the frame; The middle part of the pressing member 5 is pressed against the wire 4 to one side of the lead wire 3 in the frame, and the parts of the pressing member 5 located on both sides of the wire are welded and fixed t...

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Abstract

The invention provides a method for strengthening the wire bonding point of a semiconductor device. The wire is welded on the bonding area of ​​the surface of the lead in the frame; the bonding point between the inner lead and the wire is bridged with a pressing member, so that the middle part of the pressing member is bridged. Press the wire to one side of the inner lead of the frame, and weld the parts of the clamp on both sides of the wire to the inner lead of the frame. By arranging a compression member at the welding point of the wire, the wire is compressed to one side of the lead in the frame. The use of this structure improves the interface between the front surface of the lead and the encapsulation compound in the frame. During the extension of the layer to the wire solder joint, only after the solder joint of the pressing member is completely peeled off due to the layered extension will it continue to the wire. The solder joints are extended, so the use of this structure can prevent and improve the stripping of the wire solder joints.

Description

technical field [0001] The invention relates to the technical field of packaging of semiconductor devices, in particular to a method for strengthening solder joints of semiconductor devices. Background technique [0002] In the packaging process of semiconductor power devices, aluminum wires, aluminum strips and other wires are mainly used to achieve effective welding between the chip and the inner leads of the lead frame to meet the high electrical performance requirements such as high voltage and high current when the power device is working. After aluminum wire bonding as figure 1 , figure 2 As shown, it includes: a frame carrier table 1 for heat dissipation and carrying chips 2; lead wires 3 in the frame for electrical connection; aluminum wires 4 for connecting the chip 2 and lead wires 3 in the frame; Connected to the loading rubber 6 of the frame loading table 1. [0003] Due to the high internal temperature of the device when the power product is working, and som...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L24/85H01L2224/85051H01L24/48H01L2224/48247H01L2224/73265H01L2224/48997H01L2924/351H01L2224/32245H01L2224/4917H01L2224/85951H01L2924/19107H01L2224/48H01L2924/00H01L2924/00012H01L2224/48455
Inventor 缪小勇石海忠陆蓉郇林香张希娟
Owner NANTONG FUJITSU MICROELECTRONICS