Unlock instant, AI-driven research and patent intelligence for your innovation.

Wire welding point strengthening method of semiconductor device

A solder joint, semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as failure, limited process conditions, and harsh conditions

Active Publication Date: 2014-10-01
NANTONG FUJITSU MICROELECTRONICS
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the high internal temperature of the device when the power product is working, and sometimes the external working environment is relatively harsh, the welding reliability between the aluminum wire 4 and the lead wire 3 in the frame is required to be relatively high. Due to thermal stress, moisture, fluctuations in process quality control, etc., the aluminum wire 4 and the lead wire 3 in the frame will be peeled off, resulting in failure of the electrical parameters and functions of the product
In response to this failure, although the industry has improved welding reliability through bonding parameters, steel nozzle structure, materials, process layered control, etc., sometimes there will be a failure between the aluminum wire 4 and the lead wire in the frame, and subsequent improvements will be made. Process conditions are relatively limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wire welding point strengthening method of semiconductor device
  • Wire welding point strengthening method of semiconductor device
  • Wire welding point strengthening method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Embodiments of the present invention will be described below with reference to the drawings. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. It should be noted that representation and description of components and processes that are not related to the present invention and known to those of ordinary skill in the art are omitted from the drawings and descriptions for the purpose of clarity.

[0022] Such as image 3 As shown, the wire bonding point strengthening method of the semiconductor device provided by the embodiment of the present invention, the wire 4 is welded in the welding area on the surface of the lead 3 in the frame; The middle part of the pressing member 5 is pressed against the wire 4 to one side of the lead wire 3 in the frame, and the parts of the pressing member 5 located on both sides of the wire are welded and fixe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a wire welding point strengthening method of a semiconductor device. A wire is welded to a welding area on the surface of a lead in a framework; a pressing element is connected with the welding point portion of the lead and the wire in the framework in a crossed mode, so that the middle of the pressing element moves to one side of the lead in the framework to press the wire, and the parts, located on the two sides of the wire, of the pressing element are welded and fixed to the lead in the framework. The pressing element is arranged on the welding point of the wire, so that the wire is pressed to one side of the lead in the framework. By means of the structure, interface combination between the front side of the lead in the framework and packing and molding materials is improved. When layers extend to the welding point of the wire, the layers can continue to extend to the welding point of the wire after the welding point of the pressing element completely peels due to extending of the layers, and accordingly peeling of the welding point of the wire can be prevented due to the structure.

Description

technical field [0001] The invention relates to the technical field of packaging of semiconductor devices, in particular to a method for strengthening solder joints of semiconductor devices. Background technique [0002] In the packaging process of semiconductor power devices, aluminum wires, aluminum strips and other wires are mainly used to achieve effective welding between the chip and the inner leads of the lead frame to meet the high electrical performance requirements such as high voltage and high current when the power device is working. After aluminum wire bonding as figure 1 , figure 2 As shown, it includes: a frame carrier table 1 for heat dissipation and carrying chips 2; lead wires 3 in the frame for electrical connection; aluminum wires 4 for connecting the chip 2 and lead wires 3 in the frame; Connected to the loading rubber 6 of the frame loading table 1. [0003] Due to the high internal temperature of the device when the power product is working, and som...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2224/48997H01L2224/73265H01L24/48H01L2224/48247H01L24/85H01L2224/85051H01L2924/351H01L2224/32245H01L2224/4917H01L2224/85951H01L2924/19107H01L2224/48H01L2924/00H01L2924/00012H01L2224/48455
Inventor 缪小勇石海忠陆蓉郇林香张希娟
Owner NANTONG FUJITSU MICROELECTRONICS