FLASH device and manufacturing method thereof

Abstract

The invention discloses a FLASH device and a manufacturing method thereof. The semiconductor device comprises a semiconductor substrate, a well region in the semiconductor substrate, a sandwich structure located on the well region, a front grid stack, an insulating cap, a source region and a drain region, wherein the sandwich structure comprises a back grid conductor, semiconductor fins located on the two sides of the back grid conductor, and back grid dielectrics separating the back grid conductor and the semiconductor fins respectively; the well region serves as a part of a conductive path of the back grid conductor; the front grid stack is intersected with the semiconductor fins, and comprises a floating grid dielectric, a floating grid conductor, a control grid dielectric and a control grid conductor which are arranged sequentially; the floating grid dielectric separates the floating grid conductor and the semiconductor fins; the insulating cap is located above the back grid conductor and the semiconductor fins, and separates the back grid conductor and the control grid conductor; and the source region and the drain region are connected with a channel region provided by the semiconductor fins. The semiconductor device can achieve high integration and low power consumption.

Description

technical field [0001] The present invention relates to semiconductor technology, more specifically, to a FLASH device including a fin (Fin) and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, it is desired to reduce power consumption while reducing the size of semiconductor devices to increase integration. In order to reduce power consumption due to leakage, a UTBB (ultra-thin buried oxide body) type device formed in a semiconductor substrate is proposed. A UTBB-type device includes an ultra-thin buried oxide layer in a semiconductor substrate, a front gate stack and source / drain regions above the ultra-thin buried oxide layer, and a back gate below the ultra-thin buried oxide layer. In operation, by applying a bias voltage to the back gate, power consumption can be significantly reduced while maintaining speed. It is also difficult to combine UTBB technology into fin-type FLASH devices. Contents of the inv...

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