flash device and its manufacturing method

Abstract

Disclosed is a FLASH device and a manufacturing method thereof. The semiconductor device includes: a semiconductor substrate; a well region in the semiconductor substrate; semiconductor fins, and respective back gate dielectrics that separate the back gate conductors from the semiconductor fins, wherein the well region acts as part of the conduction path of the back gate conductors; the front gate stack intersecting the semiconductor fins, the front gate The stack includes a floating gate dielectric, a floating gate conductor, a control gate dielectric, and a control gate conductor arranged in sequence, and the floating gate dielectric separates the floating gate conductor from the semiconductor fin; an insulating cap over the back gate conductor and over the semiconductor fin , and an insulating cap separating the back gate conductor from the control gate conductor; and source and drain regions connected to the channel region provided by the semiconductor fin. The semiconductor device can realize high integration and low power consumption.

Description

technical field [0001] The present invention relates to semiconductor technology, more specifically, to a FLASH device including a fin (Fin) and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, it is desired to reduce power consumption while reducing the size of semiconductor devices to increase integration. In order to reduce power consumption due to leakage, a UTBB (ultra-thinburied oxide body) type device formed in a semiconductor substrate has been proposed. A UTBB-type device includes an ultra-thin buried oxide layer in a semiconductor substrate, a front gate stack and source / drain regions above the ultra-thin buried oxide layer, and a back gate below the ultra-thin buried oxide layer. In operation, by applying a bias voltage to the back gate, power consumption can be significantly reduced while maintaining speed. It is also difficult to combine UTBB technology into fin-type FLASH devices. Contents of th...

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Problems solved by technology

It is still difficult to combine UTBB technology into fin FLASH devices

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