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Memory device, manufacturing method and access method of memory device

A storage device and back gate technology, which is applied in semiconductor/solid-state device manufacturing, static memory, digital memory information, etc., can solve the problems of no capacitor, can not effectively control the threshold voltage, collapse, etc., and achieve the effect of improving reliability

Active Publication Date: 2014-10-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, FinFETs do not effectively control their threshold voltage
Also, as devices continue to be miniaturized, the fins become thinner, making them prone to collapse during fabrication
[0006] On the other hand, no process currently exists that effectively incorporates capacitor fabrication into transistor fabrication

Method used

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  • Memory device, manufacturing method and access method of memory device
  • Memory device, manufacturing method and access method of memory device
  • Memory device, manufacturing method and access method of memory device

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Experimental program
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Embodiment Construction

[0017] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0018] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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PUM

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Abstract

A memory device and manufacturing method thereof, and an access method. The memory device may comprise: a substrate (100); a back-gate (120) formed on the substrate (100); a transistor, including fins (104) formed at the two opposite sides of the back-gate (120) on the substrate (100) and a gate stack formed on the substrate (100), the gate stack intersecting the fin (104); and back-gate dielectric layers (116) between the back-gate (120) and each fin (104) and between the back-gate (120) and the substrate (100), there being openings arranged on the back-gate dielectric layer (116) at one side of the gate stack, the back-gate (120) being electrically connected to the fins through said openings.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a storage device, a manufacturing method and an access method thereof. Background technique [0002] Various memory devices based on semiconductor technologies such as dynamic random access memories (DRAMs) are currently proposed. For example, various mTnC memory cells can be realized by cooperating with transistors (T) and capacitors (C) (m and n respectively represent the number of transistors and the number of capacitors in a single memory cell). [0003] On the one hand, with the continuous miniaturization of transistors, a variety of high-performance transistor structures have been proposed, such as UTBB (Ultra Thin Buried Oxide and Body) devices and FinFET (Fin Field Effect Transistor), etc. [0004] UTBB devices utilize ET-SOI (Extremely Thin-Semiconductor-On-Insulator) substrates. Due to the existence of buried oxide (BOX) in the SOI substrate, the short ...

Claims

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Application Information

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IPC IPC(8): H01L27/108H01L21/8242G11C11/407
CPCH01L29/66795H01L29/785H01L29/66803H10B12/36H10B12/056
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI