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Finned bipolar junction transistor and manufacturing method thereof

A bipolar junction and transistor technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of PN junction position variation and small PN junction area of ​​fin bipolar junction transistors

Active Publication Date: 2014-10-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The problem solved by the present invention is that the area of ​​the PN junction formed between the emitter region and the base region in the fin bipolar junction transistor prepared in the prior art is small; and it is easy to cause the position of the PN junction of the fin bipolar junction transistor to change

Method used

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  • Finned bipolar junction transistor and manufacturing method thereof
  • Finned bipolar junction transistor and manufacturing method thereof
  • Finned bipolar junction transistor and manufacturing method thereof

Examples

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no. 1 Embodiment

[0053] This embodiment will describe in detail the method of fabricating a fin bipolar junction transistor.

[0054] Figure 4A to Figure 6B It is a structural schematic diagram of the method for preparing a fin bipolar junction transistor in this specific embodiment, which will be combined below Figure 4A to Figure 6B A first embodiment of the present invention will be described in detail.

[0055] first reference Figures 4A-4C , providing a substrate 201; forming a fin portion 202 doped with impurities on the substrate 201 as a base region, and the fin portion 202 includes a first region 2021 and a second region 2023 separated from each other.

[0056] Figure 4A is a schematic diagram of a three-dimensional structure of a fin 202 doped with impurities formed on a substrate 201, Figure 4B for Figure 4A The sectional view of the plane cut by the median line A-A', Figure 4C for Figure 4A Sectional view of the plane cut by the median line B-B'.

[0057] In a speci...

no. 2 Embodiment

[0076] This embodiment is an embodiment of a fin bipolar junction transistor.

[0077] refer to Figures 5A-6B , the fin bipolar junction transistor includes: a substrate 201; a fin 202 located on the substrate 201, the fin 202 is a base region; the fin 202 includes a first region 2021 and a second region separated from each other A region 2023; a collector region located on the first region 2021; an emission region located on the second region 2023.

[0078] refer to Figure 6A and 6B , the fin portion 202 further includes a third region 2022 located between the first region 2021 and the second region 2023 .

[0079] In a specific embodiment, the material of the substrate 201 may be silicon, silicon germanium, silicon-on-insulator, and in other embodiments, it may also be other conventional semiconductor materials well known in the art.

[0080] In a specific embodiment, the fin bipolar junction transistor is a PNP transistor, the material of the fin portion 202 is SiC, a...

no. 3 Embodiment

[0084] This embodiment will describe in detail the method of fabricating a fin bipolar junction transistor.

[0085] Figure 7A to Figure 8B It is the structure schematic diagram of the preparation fin bipolar junction transistor of this specific embodiment, will combine below Figure 7A to Figure 8B , the technical solution of the present invention will be described in detail.

[0086] first reference Figures 7A-7C , providing a substrate 301; forming a fin 302 doped with impurities on the substrate 301 as an emission region, and the fin 302 includes a first region 3021 and a second region 3022 in contact with each other.

[0087] In a specific embodiment, the total length of the first region 3021 and the second region 3022 is smaller than the length of the fin 302, so as to reserve a space on the fin 302 and form a contact electrode on the fin 302; if There is no need to reserve space for the formation of contact electrodes, and the total length of the first region 3021 ...

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Abstract

The invention provides a finned bipolar junction transistor and a manufacturing method thereof. The finned bipolar junction transistor comprises a substrate, a fin part located on the substrate as a base region and comprising mutually separated first and second regions, a collector region located on the first region, and an emitter region located on the second region. The finned bipolar junction transistor manufactured by the method is characterized in that a PN junction formed between the base region and the emitter region has relatively large area, and the area of the PN junction is adjustable in a large range.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a fin-type bipolar junction transistor and a forming method thereof. Background technique [0002] Field-effect transistors play a dominant role in large-scale integrated circuits due to their low operating current and voltage and their ease of process integration. However, bipolar junction transistors (Bipolar Junction Transistor, BJT) can amplify signals, and have better power control, high-speed operation and durability, so they are still widely used. The bipolar junction transistor is composed of two PN junctions that are adjacent to each other and back-to-back, and are divided into two combined structures: PNP and NPN; three poles are drawn externally: collector, emitter and base. The base area is shared by two PN junctions. [0003] As the size of semiconductors continues to decrease, problems such as leakage current of transistors become more and more prominent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/73H01L29/08H01L29/10
CPCH01L29/1004H01L29/66234H01L29/73
Inventor 黄新运李勇陶佳佳张帅居建华
Owner SEMICON MFG INT (SHANGHAI) CORP
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