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Thin film transistor and display array substrate and manufacturing method thereof

A technology of a thin film transistor and a manufacturing method, which is applied in the field of display array display panels, can solve the problems of many manufacturing processes, lowering and disadvantageous manufacturing cost of display array substrates, etc., and achieves the effects of reducing etching processes and improving production efficiency.

Active Publication Date: 2017-02-08
CENTURY DISPLAY (SHENZHEN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the manufacturing process of the display array substrate includes multiple etching processes, and there are many manufacturing processes, which is not conducive to the reduction of the manufacturing cost of the display array substrate.

Method used

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  • Thin film transistor and display array substrate and manufacturing method thereof
  • Thin film transistor and display array substrate and manufacturing method thereof
  • Thin film transistor and display array substrate and manufacturing method thereof

Examples

Experimental program
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Embodiment Construction

[0052] see figure 1 , is a schematic plan view of a pixel region in an embodiment of the present invention applied to a display array substrate in a liquid crystal display device. The display array substrate 10 includes a plurality of scan lines 11 parallel to each other, and a plurality of data lines 12 parallel to each other and insulated from the scan lines 11 respectively. The plurality of scan lines 11 and the plurality of data lines 12 jointly define a plurality of pixel regions P, and a pixel region P is defined by the smallest area jointly defined by two adjacent scan lines 11 and two adjacent data lines 12 . In each pixel area P, the display array substrate 10 further includes a common electrode line 13 (refer to figure 2 ), a thin film transistor (thin film transistor, TFT) 100, a pixel electrode 14 and a common electrode 15 (see figure 2 ). A horizontal electric field is formed between the common electrode 15 and the pixel electrode 14 to drive the liquid cryst...

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Abstract

A thin film transistor manufacturing method includes that a grid and a grid insulation layer covering the grid are formed on a substrate, a semiconductor layer, am omega contact material layer and a metal layer are sequentially formed on the grid insulation layer at the positions corresponding to the grid, the metal layer is patterned, a source and a drain are formed on the omega contact material layer, an opening is formed between the source and the drain, only the omega contact material layer is exposed from the opening position, at least one insulation material layer is formed to cover the substrate with the opening, the source and the drain formed, at least one insulation material layer is patterned, the insulation material layer and the omega contact material layer corresponding to the opening position are removed to form an omega contact layer, the semiconductor layer is exposed to form a semiconductor channel, at least one insulation material layer corresponding to the drain is removed, and the drain at the position is exposed to form a connection hole. A manufacturing method for a display array substrate with the thin film transistor is further provided.

Description

technical field [0001] The invention relates to a thin film transistor, a manufacturing method thereof, and a display array panel including the thin film transistor. Background technique [0002] Display array substrates using thin film transistors as driving components have been widely used in display devices, such as LCD TVs, notebook computers and monitors. In order to effectively reduce the price of the limited display array substrate, the simplification of the manufacturing process of the thin film transistor has become an important subject at present. [0003] At present, in the manufacturing process of the display array substrate, after the fabrication of the source and the drain is completed, the channel between the source and the drain needs to be etched in order to expose the active layer of the semiconductor material, so that the source The N-type carriers in the ohmic contact layer between the electrode, the drain and the active layer migrate in the channel to f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/41H01L27/12H01L21/336H01L21/77
CPCH01L27/124H01L27/1288H01L29/401H01L29/66765
Inventor 王明宗柳智忠郑亦秀余文强
Owner CENTURY DISPLAY (SHENZHEN) CO LTD