Unlock instant, AI-driven research and patent intelligence for your innovation.

A Parallel Programming Circuit for Magnetic Logic Devices

A technology for logic devices and programming circuits, applied in the field of parallel programming circuits, can solve problems such as low write reliability, and achieve the effects of increasing write reliability, large write current, and small equivalent total resistance

Active Publication Date: 2017-04-19
BEIHANG UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the problem of low writing reliability faced by the traditional serial writing method of the magnetic trigger MFF mentioned in the above background, the present invention proposes a new parallel programming method for a parallel programming circuit of a magnetic logic device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Parallel Programming Circuit for Magnetic Logic Devices
  • A Parallel Programming Circuit for Magnetic Logic Devices
  • A Parallel Programming Circuit for Magnetic Logic Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The present invention is a parallel programming circuit of a magnetic logic device. Referring to the accompanying drawings, the substantive features of the present invention are further described.

[0037] Detailed exemplary embodiments are disclosed herein, specific structural and functional details of which are merely for the purpose of describing particular embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is intended to be limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention. Additionally, well-known elements, devices and subcircuits of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the embodiments of the invention.

[0038] Fig. 1(a) and Fig. 1(b) are the simplified structure schematic diagrams of PMA-MTJ and In-plane-MTJ, which are the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a parallel programming circuit of a magnetic logic device. Two end electrodes of two MTJs (Magnetic Tunnel Junctions) M1 and M2 in an MFF (Magnetic Flip-Flop) are in crossed connection; one path in two crossed paths is connected with a switch S5; meanwhile, the upper end and the lower end of each MTJ are respectively connected in series with one switch; and the direction of the programming current flowing through each MTJ is controlled by controlling the on-off state of four switches S1, S2, S3 and S4. The parallel programming circuit provided by the invention has the advantages that the two MTJs in the MFF have the parallel connection relationship, so the shown equivalent total resistance is relatively smaller; a transistor connected in series with the MTJs can share higher voltage; the transistor can favorably enter a saturation region; further, heavier write current is provided; and the write reliability is enhanced.

Description

technical field [0001] The invention relates to a parallel programming circuit of a magnetic logic device, belonging to the technical field of magnetic nonvolatile logic. Background technique [0002] Magnetic tunnel junction MTJ (Magnetic Tunnel Junction), as shown in Figure 1, in addition to being used as the core storage unit of magnetic memory, can also be applied to logic circuits, that is, magnetic logic. After the non-volatile MTJ is introduced into the logic circuit, lower standby power consumption and lower dynamic power consumption in the working state can be realized. [0003] Flip-flop FF (Flip-Flop) is the basic unit of sequential logic circuit, and its power consumption has a great influence on the power consumption of SoC (System on Chip) on chip. The non-volatile magnetic flip-flop MFF (Magnetic Flip-Flop) is considered to be an effective solution to solve the high static power consumption of SoC. [0004] as attached figure 2 As shown, the MTJ in the MFF ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15
CPCG11C11/161G11C11/1673G11C11/1675
Inventor 李政郭玮康旺燕博南赵巍胜
Owner BEIHANG UNIV