Electrostatic discharge method for deep trench etching equipment

Abstract

The invention provides an electrostatic discharge method for deep trench etching equipment. The deep trench etching equipment is provided with a wafer finger, an E-chuck, a bridle, a wafer support and an ESCSH. The wafer finger is installed on the wafer support and gradually makes contact with a wafer when the ESCSH descends to the down position from the up position. The ESCSH is connected with a shell of the deep trench equipment all the time. The shell is grounded. The electrostatic discharge method comprises the step that no matter whether the ESCSH is at the up position or the down position, the wafer support is electrically connected with the ESCSH all the time. According to the electrostatic discharge method for the deep trench etching equipment, a large amount of static electricity generated on the E-chuck and the wafer after the etching technology is finished can be eliminated, and the phenomenon of wafer sticking caused when static electricity is not discharged thoroughly is avoided.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing equipment. Specifically, the present invention relates to an electrostatic discharge method for deep groove etching equipment. Background technique [0002] Existing deep trench etching equipment (such as Alcatel AMS200 deep silicon plasma etching machine) generally includes wafer fingers, electrostatic adsorption plates (E-chuck), and finger mounting rings ( Bridle), wafer support ring (Wafer support) and electrostatic adsorption plate support (ESC SH) and other parts. Among them, the wafer finger is installed on the wafer support ring, and the wafer finger gradually contacts the wafer (Wafer) when the electrostatic adsorption plate support body drops from the raised position (Up position) to the lowered position (Down position). The adsorption plate support is always connected with the shell of the deep groove etching equipment, and the shell is grounded. [0003] However,...

AI Technical Summary

Problems solved by technology

[0006] One of the reasons for the above problems is that the above-mentioned wafer support ring and the electrostatic adsorption plate support are not always electrically connected.

That is, when the electrostatic adsorption plate support body is lowered from the raised position to the lowered position, the wafer support ring is separated from the shell of the deep groove etching equipment, so the wafer and the electrostatic adsorption plate cannot be discharged to the ground through the shell