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A method and device for removing silicon slag

A technology for silicon slag and components, applied in the field of semiconductor chip manufacturing process, can solve the problems of residual silicon slag, poor effect of sweeping silicon slag by anisotropic machine, etc.

Active Publication Date: 2017-02-22
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The embodiment of the present invention provides a method and device for removing silicon slag, which is used to solve the problem in the prior art that the effect of anisotropic machines sweeping silicon slag is poor and there is residual silicon slag

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  • A method and device for removing silicon slag
  • A method and device for removing silicon slag
  • A method and device for removing silicon slag

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Embodiment Construction

[0021] The embodiment of the present invention designs a method and device for removing silicon slag. By changing the etching method of silicon slag cleaning, the effect of silicon slag cleaning is improved, and it solves the problem of using anisotropic machines to remove silicon slag in the prior art. , There is a problem of residual silicon slag.

[0022] The preferred embodiments of the present invention will be described below in conjunction with the drawings.

[0023] Refer to figure 2 As shown, the steps of the method for removing silicon slag designed by the present invention are as follows:

[0024] Step 201: Inject SF6 gas into the surface of the component.

[0025] The method for removing silicon slag designed in the embodiment of the present invention is not only suitable for the case where only part of the metal layer is corroded (not corroded to the bottom), but also for the case where the metal layer is corroded to the bottom (at this time, the metal layer is corroded ...

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Abstract

An embodiment of the invention discloses a method and device for removing silicon slag. The method includes: inputting SF6 gas to the surface of a component; ionizing SF6 to form fluorine-containing plasma gas; in a process of reaction of the fluorine-containing plasma gas and silicon slag, pumping out gas on the surface of the component, and till preset reaction time is reached, obtaining the component after silicon slag is removed. The method is used for solving the problems existing in the prior art that an effect of silicon slag sweeping of an anisotropy machine is poor, and silicon slag residue exists.

Description

Technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to a method and device for removing silicon slag. Background technique [0002] In the process of semiconductor chip manufacturing, the metal layer of power components is mostly made of aluminum / silicon (1%) / copper (0.5%) alloy. Due to the large size of power components, the corrosion depends on the thickness of the metal. Use full wet, full dry aluminum corrosion or "wet + dry" aluminum corrosion. Since the etching solution does not corrode silicon in the wet aluminum etching process, after the wet aluminum etching, the silicon in the metal layer will remain. In the "wet + dry" aluminum corrosion process, the wet aluminum corrosion is performed first, and then the silicon slag must be removed by dry sweeping (that is, the silicon slag is removed by the dry method), otherwise it will affect the subsequent The dry process aluminum corrosion cannot com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3213H01J37/32
CPCH01L21/02068H01L21/67069
Inventor 李方华陈定平
Owner FOUNDER MICROELECTRONICS INT