Semiconductor structure and production method thereof
A semiconductor and graphic structure technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that the etching speed cannot be effectively increased, and the etching process is difficult to control, so as to speed up the etching speed and improve production efficiency Effect
Pending Publication Date: 2022-01-14
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0004] The existing dry etching process is difficult to control and cannot effectively increase the etching speed
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[0049] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with specific implementations and with reference to the accompanying drawings. It should be understood that these descriptions are exemplary only, and are not intended to limit the scope of the application. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present application.
[0050] A schematic diagram of a layer structure according to an embodiment of the present application is shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manuf...
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The invention discloses a semiconductor structure and a production method thereof. The preparation method of the semiconductor structure comprises the steps: providing a substrate, and enabling the surface of the substrate to be covered with a to-be-etched graphic structure; and etching and removing the to-be-etched pattern structure by using an ion implantation technology to obtain a target pattern structure. When high-energy ions impact on the to-be-etched pattern structure, energy is transferred from incident ions to atoms on the surface of the to-be-etched pattern structure, and if the binding energy between the atoms on the surface of the to-be-etched pattern structure is lower than the energy of the incident ions, the atoms on the surface of the to-be-etched pattern structure are moved away or removed from the surface so that the purpose of etching is achieved. According to the method, the etching speed can be controlled by controlling the energy and dosage of the injected ions, the etching speed can be increased by increasing the energy and dosage of the injected ions, and the production efficiency of products is improved.
Description
technical field [0001] This application belongs to the technical field of semiconductors, and in particular relates to a semiconductor structure and a preparation method thereof. Background technique [0002] Etching is a technology that removes materials using chemical reactions or physical impacts. In fact, in a narrow sense, it is photolithographic etching. Etching treatment to remove the part that needs to be removed. Generally, etching technology can be divided into wet etching and dry etching. It is a very important process in semiconductor manufacturing process, microelectronics manufacturing process and micro-nano manufacturing process. The step is the main process of patterning (pattern) processing associated with photolithography. [0003] At present, in the semiconductor industry, plasma etching in dry etching is more and more widely used because it can make circuit patterns finer. [0004] The existing dry etching process is difficult to control, and the etchi...
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IPC IPC(8): H01L21/265H01L21/266
CPCH01L21/26513H01L21/266
Inventor 王楚玉
Owner CHANGXIN MEMORY TECH INC