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Semiconductor light-emitting element, method for manufacturing same, and light source device

A technology of light-emitting elements and manufacturing methods, which is applied to semiconductor devices, electrical components, electric solid-state devices, etc., and can solve problems such as the reduction of quantum efficiency inside the light-emitting layer

Inactive Publication Date: 2014-11-19
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the generated piezoelectric field, the distribution of electrons and holes in the light-emitting layer is shifted, and the internal quantum efficiency of the light-emitting layer is reduced due to the quantum confinement Stark effect of carriers.

Method used

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  • Semiconductor light-emitting element, method for manufacturing same, and light source device
  • Semiconductor light-emitting element, method for manufacturing same, and light source device
  • Semiconductor light-emitting element, method for manufacturing same, and light source device

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no. 1 Embodiment approach ）

[0085] Hereinafter, a first embodiment will be described with reference to the drawings.

[0086] image 3 (a) ~ image 3 (d) schematically shows the semiconductor light emitting element of the first embodiment. image 3 (a) represents a planar structure, image 3 (b) means image 3 (a) Sectional structure of line IIIb-IIIb, image 3 (c) and image 3 (d) Enlargement shows the stripe structure 50 .

[0087] like image 3 (a) and image 3 As shown in (b), the semiconductor light emitting element 101 of this embodiment includes: a substrate 10 ; and a semiconductor stacked structure 20 including an active layer 22 formed on the substrate 10 .

[0088] Hereinafter, the detailed structure of the semiconductor light emitting element 101 of the first embodiment will be described.

[0089] The semiconductor light emitting element 101 of the first embodiment has a semiconductor stacked structure 20 including an active layer 22 whose main surface is a nonpolar surface or a semi...

no. 2 Embodiment approach ）

[0185] A second embodiment will be described below with reference to the drawings.

[0186] Figure 13 shows the semiconductor light-emitting element of the second embodiment, showing the same as Figure 4 (a) The cross-sectional structure in the direction corresponding to the X-X direction of etc. In the following description, the description of the parts common to the first embodiment will be omitted, and the difference in structure and the difference in manufacturing method will be described.

[0187] like Figure 13As described above, the semiconductor light emitting element 102 of the second embodiment is characterized in that it includes at least one translucent member 13 made of a material different from that of the substrate 10 so as to be in contact with the second main surface 10b of the substrate 10 .

[0188] In the semiconductor light emitting element 102 of the present embodiment, the first main surface 13 a of the translucent member 13 that is the surface opp...

no. 3 Embodiment approach ）

[0249] A third embodiment will be described below with reference to the drawings.

[0250] Figure 21 shows the semiconductor light-emitting element of the third embodiment, showing the same as Figure 4 (a) The cross-sectional structure in the direction corresponding to the X-X direction of etc. In the following description, the description of the parts common to the first embodiment will be omitted, and the difference in structure and the difference in manufacturing method will be described.

[0251] like Figure 21 As shown, in the semiconductor light emitting element 103 of the third embodiment, the side surface of the substrate 10 is formed as a slope 52 having a fine uneven structure 51 . In this respect, it differs from the configuration of the first embodiment. By forming the slope 52 on the side surface of the substrate 10 and forming the fine concave-convex structure 51 on the slope 52, the efficiency of extracting light from the side surface of the semiconductor...

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Abstract

A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess.

Description

technical field [0001] The present invention provides a semiconductor light-emitting element having a nitride-based semiconductor stacked structure including an active layer emitting polarized light with a non-polar surface or a semi-polar surface as a main surface, a manufacturing method thereof, and a light source device using a semiconductor light-emitting element . Background technique [0002] Nitride semiconductors of group VA elements containing nitrogen (N) are expected to be used as materials for short-wavelength light-emitting devices due to their large band gaps. Among them, research on gallium nitride-based compound semiconductors (GaN-based semiconductors) is in full swing, and blue light-emitting diodes (LEDs), green LED devices, and blue LED semiconductor laser devices using gallium nitride-based compound semiconductors are also being put into practical use. [0003] The gallium nitride-based compound semiconductor includes a compound semiconductor obtained b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/16H01L33/32
CPCH01L33/22H01L33/16H01L33/32H01L2933/0091H01L33/34H01L2224/16H01L2924/10155
Inventor 藤田稔之井上彰横川俊哉
Owner PANASONIC CORP
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