Anti-corrosion aluminum connection wire
A high corrosion resistance, bonding wire technology, applied in the field of bonding wire, can solve the problem of pure aluminum thin wire not being practical, and achieve the effect of maintaining electrical conductivity, preventing intergranular corrosion, and preventing chip cracks
Inactive Publication Date: 2014-11-26
TANAKA DENSHI KOGYO KK
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Problems solved by technology
In devices used in such high-temperature environments, thin pure aluminum wires made of only high-purity aluminum (Al), which are easily softened, have not yet been put into practical use.
Method used
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Effect test
Embodiment 1
[0046] Properties such as corrosion resistance in high-temperature and high-humidity environments of the bonding wires of the following examples produced through the above steps were confirmed under the following conditions.
[0047] (Ultrasonic bonding conditions)
[0048] The diameter of the thin aluminum alloy wire is 0.05mm, 0.3mm, 0.5mm, the length of the arc is 8mm, and the height of the arc is 1.3mm.
[0049] Ultrasonic bonding of thin aluminum alloy wires to an Al-1.0% Si film (thickness: 3 μm) on a Si chip (thickness: 0.2 mm) was carried out using a REBO-7 fully automatic bonding machine manufactured by Ultrasonic Industry Co., Ltd.
[0050] The joining conditions were such that, at a frequency of 130 kHz, the load and ultrasonic conditions were adjusted so that the melting width of the first joint was 1.3 times the wire diameter, and all 100 samples including the first joint and Ultrasonic bonding for the second bonding. As the superhard tool and the bonding guide,...
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Abstract
The invention provides an anti-corrosion aluminum connection wire, which can inhibit the intergranular corrosion of the high purity aluminum wire for the semiconductor connection under the high temperature / and the high humidity environment. The anti-corrosion aluminum connection wire enables the 99.99% high purity aluminum to contain 10-200 weight parts ppm of rhodium (Rh) and or palladium (Pd); those addictive is used for mandatory solid solution and forms a dispersing phase of the aluminum intermetallic compound; the diameter of the crystallization particle of the aluminum substrate is 10-100 mum; after the reacting with the catalyst the rhodium (Rh) and or palladium (Pd) enable the surface of the aluminum to produce atom-shaped hydrogen and form H2, which prevent the H2 from spreading and infiltrating so as to inhibit the intergranular corrosion produced by the fact that the atom-shaped hydrogen is bonding to produce the H2.
Description
technical field [0001] The present invention relates to an aluminum alloy bonding wire for connecting an electrode on a semiconductor element used in a high-temperature environment and an external electrode. Especially, in a bonding wire of a semiconductor element used in a high-temperature environment such as an airplane, an electric vehicle, or a ship, the The intergranular corrosion that occurs due to the moisture in the environment improves the durability and reliability of the bonding wire. Background technique [0002] Aluminum (Al), copper (Cu ), nickel (Ni) and other raw materials. [0003] Although the electrodes on these substrates are sometimes plated with precious metals such as gold (Au), silver (Ag) or nickel (Ni), they are collectively referred to as "aluminum plates" below unless otherwise specified. [0004] Aluminum alloy thin wires using high-purity aluminum (Al) having a high electrical conductivity of 60% or more are used to connect electrodes such as ...
Claims
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IPC IPC(8): C22C21/00C22F1/04H01L21/60
CPCH01L24/43H01L2224/05624H01L2224/43H01L2224/43848H01L2224/45H01L2224/45015H01L2224/45124H01L2224/85205H01L2924/01204H01L2924/01045H01L2924/01046H01L2924/013H01L2924/01028H01L2924/00013H01L2924/20106H01L2924/20107H01L2924/20108H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/00012
Inventor 天野裕之中岛伸一郎市川司三上道孝
Owner TANAKA DENSHI KOGYO KK