Corrosion-resistant aluminum alloy bonding wire
A high-corrosion-resistant, bonding wire technology, applied in the field of bonding wires, can solve the problems of unrealized practical use of pure aluminum thin wires, and achieve the effects of maintaining electrical conductivity, preventing chip cracks, and preventing intergranular corrosion
Inactive Publication Date: 2017-01-04
TANAKA DENSHI KOGYO KK
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Problems solved by technology
In devices used in such high-temperature environments, thin pure aluminum wires made of only high-purity aluminum (Al), which are easily softened, have not yet been put into practical use.
Method used
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Effect test
Embodiment 1
[0046] Properties such as corrosion resistance in high-temperature and high-humidity environments of the bonding wires of the following examples produced through the above steps were confirmed under the following conditions.
[0047] (Ultrasonic bonding conditions)
[0048] The diameter of the thin aluminum alloy wire is 0.05mm, 0.3mm, 0.5mm, the length of the arc is 8mm, and the height of the arc is 1.3mm.
[0049] Ultrasonic bonding of thin aluminum alloy wires to an Al-1.0% Si film (thickness: 3 μm) on a Si chip (thickness: 0.2 mm) was carried out using a REBO-7 fully automatic bonding machine manufactured by Ultrasonic Industry Co., Ltd.
[0050] The joining conditions were such that, at a frequency of 130 kHz, the load and ultrasonic conditions were adjusted so that the melting width of the first joint was 1.3 times the wire diameter, and all 100 samples including the first joint and Ultrasonic bonding for the second bonding. As the superhard tool and the bonding guide,...
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Abstract
[Abstract] [Title of Invention] CORROSION-RESISTANT ALUMINUM ALLOY BONDING WIRE [Problem to be Solved] To inhibit intergranular corrosion of a high-purity aluminum wire for connecting semiconductor devices under a high-temperature and high-humidity environment. [Solution] An aluminum alloy bonding wire comprising high- purity aluminum having a purity of 99.99% by mass or more and 10 to 200 ppm by mass of rhodium (Rh) and / or palladium (Pd) is provided. The rhodium and / or palladium element is forcibly solid-soluted to form a dispersed phase of an intermetallic compound with aluminum in an aluminum matrix having a grain size of 10 to 100 ym. Rhodium (Rh) and palladium (Pd) prevent atomic hydrogen generated on the aluminum surface from diffusing and infiltrating into the aluminum matrix by converting the atomic hydrogen into H 2 by the catalytic function and inhibit intergranular corrosion by binding of atomic hydrogen into H . 2 [Selected drawing] Fig. 1 18
Description
technical field [0001] The present invention relates to an aluminum alloy bonding wire for connecting an electrode on a semiconductor element used in a high-temperature environment and an external electrode. Especially, in a bonding wire of a semiconductor element used in a high-temperature environment such as an airplane, an electric vehicle, or a ship, the The intergranular corrosion that occurs due to the moisture in the environment improves the durability and reliability of the bonding wire. Background technique [0002] Aluminum (Al), copper (Cu ), nickel (Ni) and other raw materials. [0003] Although the electrodes on these substrates are sometimes plated with precious metals such as gold (Au), silver (Ag) or nickel (Ni), they are collectively referred to as "aluminum plates" below unless otherwise specified. [0004] Aluminum alloy thin wires using high-purity aluminum (Al) having a high electrical conductivity of 60% or more are used to connect electrodes such as ...
Claims
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IPC IPC(8): H01L21/60C22C21/00C22F1/04
CPCH01L24/43H01L2224/05624H01L2224/43H01L2224/43848H01L2224/45H01L2224/45015H01L2224/45124H01L2224/85205H01L2924/01204H01L2924/01045H01L2924/01046H01L2924/013H01L2924/01028H01L2924/00013H01L2924/20106H01L2924/20107H01L2924/20108H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/00012
Inventor 天野裕之中岛伸一郎市川司三上道孝
Owner TANAKA DENSHI KOGYO KK