Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for reducing DRAM soft error

A soft error and error technology, applied in the field of computer memory design and application, can solve problems such as temporary failure of equipment, achieve the effect of reducing the incidence rate, wide application range, and strong applicability

Active Publication Date: 2014-11-26
SHANGHAI XINCHU INTEGRATED CIRCUIT
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above existing problems, the present invention discloses a method for reducing DRAM soft errors, so as to overcome the problem in the prior art that erroneous data is generated due to DRAM soft errors and temporary failure of equipment is caused

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reducing DRAM soft error
  • Method for reducing DRAM soft error
  • Method for reducing DRAM soft error

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0031] This embodiment relates to a method for reducing DRAM soft errors, which is applied in a computer system. The DRAM is the memory of the computer system. Under normal conditions, the computer system can perform error prevention on the data in the DRAM. The method includes the following steps:

[0032] Step 1: Perform DRAM error detection and mark errors to obtain the number of error bits of data in the DRAM.

[0033]Step 2, judging whether the number of error digits of the data in the DRAM reaches the warning value, if not, the above-mentioned computer system performs error correction so that the DRAM returns to a normal state (including that the charging voltage is restored to the original charging voltage, and the refresh rate is restored to the original refresh rate ), if so, go to step...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for reducing DRAM soft error. The method can actively detect the soft error and intelligently reduce occurrence rate of the soft error, so that error digits can be maintained within a range of DRAM error correction capacity until no error appears and DRAM returns to a normal state, thereby increasing reliability, usability and serviceability of a memory. The method can be used for providing key task procedures and service fields for customers, and has a wide application scope and high applicability.

Description

technical field [0001] The invention relates to the field of computer memory design and application, in particular to a method for reducing DRAM soft errors. Background technique [0002] At present, the reliability, availability and serviceability of servers are critical issues for contemporary IT enterprises, because these servers need to provide mission-critical applications to customers. ) and services, such as databases, enterprise resource planning (ERP), customer resource management (CRM), business intelligence applications, and high-end transaction processing systems, etc., once the delivery of these applications fails, the loss caused by server system downtime will be extremely expensive. Therefore, Intel has added extensive and powerful RAS functions to its processor chips to provide error detection, correction, suppression, and recovery functions for all processors, memory, and I / O data paths, thereby making the system more secure and stable. . The so-called RAS...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44
Inventor 景蔚亮陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT