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Manufacturing method and system for thin film transistor and thin film transistor

A technology of a thin film transistor and a manufacturing method, which is applied in the field of electronic paper, can solve the problems of complex process and difficult realization, and achieve the effect of simple process and cost saving.

Inactive Publication Date: 2014-12-03
HUNAN ELECTRONICS INFORMATION IND GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention provides a thin film transistor manufacturing method, system and thin film transistor to solve the problem in the prior art that the process of connecting the scanning circuit to the controller of the substrate through the transfer wire is complicated and difficult to implement. The specific solution as follows:

Method used

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  • Manufacturing method and system for thin film transistor and thin film transistor
  • Manufacturing method and system for thin film transistor and thin film transistor
  • Manufacturing method and system for thin film transistor and thin film transistor

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] The invention discloses a method for manufacturing a thin film transistor, the flow chart of which is as follows figure 1 shown, including:

[0044] Step S11, selecting a drive substrate;

[0045] Step S12, depositing a metal conductive film layer on the driving substrate to form a gate electrode pattern and a scanning line connected to the gate electrode pattern, and the gate electrode pattern and the scanning line are located on the scanning line lay...

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Abstract

The invention discloses a manufacturing method and system for a thin film transistor and the thin film transistor. A scanning line layer, an insulating layer, an oxide semiconductor layer and a data line layer are respectively formed on a driving substrate, one end of a scanning line on the scanning line layer, the insulating layer and one end of a joint line of the data line layer are fused together, and therefore the scanning line of the scanning line layer is communicated with the joint line; the other end of the joint line fused together with the scanning line is connected with a controller of the driving substrate, and therefore the scanning line and the controller are connected. In addition, the joint line can penetrate through the insulating layer without special hole punching, the scanning line, the insulating layer and the joint line are fused together, and therefore the process is simple, and cost is saved.

Description

technical field [0001] The invention relates to the field of electronic paper, in particular to a thin film transistor manufacturing method, system and thin film transistor. Background technique [0002] E-paper technology mostly uses electrophoretic display technology as the display panel. Its display effect is close to the effect of natural paper and avoids reading fatigue. However, it requires additional digital devices for reading, such as electronic dictionaries and personal computers. [0003] Currently, display panels for electronic paper are usually made of thin film transistors. [0004] The thin film transistor includes a substrate, a scan line layer, an insulating layer, and a data line layer, wherein the scan line layer is composed of a gate electrode pattern formed on the substrate, a gate line connected to the gate electrode pattern, and a scan line. [0005] Usually, the scanning line is connected to the controller of the driving substrate through the transfe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786G02F1/167
CPCH01L27/1259G02F1/167H01L27/124
Inventor 王金科刘丹军包顺
Owner HUNAN ELECTRONICS INFORMATION IND GRP
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