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Method for controlling fluorine separate-out defects of source and drain regions of PMOS devices

A source-drain region and device technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of photoresist 20 corrosion, affecting the overall performance of the device, etc., and achieve total dose reduction, enhanced control, and reduced The effect of the injected dose

Inactive Publication Date: 2014-12-24
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The escaped fluorine 10 condenses and accumulates on the adjacent photoresist 20 and reacts with it, thereby causing corrosion to the photoresist 20, and the damaged part may affect the overall performance of the device

Method used

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  • Method for controlling fluorine separate-out defects of source and drain regions of PMOS devices
  • Method for controlling fluorine separate-out defects of source and drain regions of PMOS devices
  • Method for controlling fluorine separate-out defects of source and drain regions of PMOS devices

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Embodiment Construction

[0020] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0021] Such as Figure 5 As shown, the method for controlling the fluorine precipitation defects in the source and drain regions of the PMOS device of the present invention includes:

[0022] Step 1: The first fluorine implantation is performed on the source and drain regions of the PMOS device, wherein the fluorine element is implanted with boron difluoride, and the implantation dose remains unchanged compared with the prior art.

[0023] Step 2: Carrying out carbon implantation into the source and dr...

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Abstract

The invention discloses a method for controlling the fluorine separate-out defects of source and drain regions of PMOS devices. The method includes the steps that fluorine injection is performed on the source and drain regions of the PMOS devices for the first time; fluorine injection is performed on the source and drain regions of the PMOS devices for the second time, and the injection dosage of the second time of fluorine injection is smaller than or equal to 8*10<14>. When injection is jointly performed on the source and drain regions of the PMOS devices, the total injection dosage of fluorine is reduced by controlling the second-time injection dosage of fluorine, so that the phenomenon of separate-out of fluorine in the PMOS devices is effectively relieved, and the defects of corrosion to photoresist are reduced.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for controlling fluorine precipitation defects in the source and drain regions of a PMOS device. Background technique [0002] In the high-cost process of semiconductor manufacturing, when implanting donor or acceptor elements, non-donor or non-acceptor elements are often used for co-implantation to achieve the required auxiliary effect. The most common auxiliary implant elements are germanium, silicon, carbon, fluorine, nitrogen, etc. The roles of various elements vary, for example, germanium and silicon are mainly used for pre-amorphization, carbon is mainly used for inhibiting diffusion, and fluorine is mainly used for improving negative bias temperature instability (NBTI) and inhibiting diffusion. [0003] When implanting the source and drain regions of PMOS, boron difluoride (BF 2 ) and fluorine (F) for co-injection. One of the reasons for injectin...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/336
CPCH01L21/26506H01L29/66477
Inventor 邱裕明
Owner SHANGHAI HUALI MICROELECTRONICS CORP