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Metal source and drain contact, field effect transistor, manufacturing method of metal source and drain contact and manufacturing method of field effect transistor

A field-effect transistor, metal source technology, applied in the fields of metal source-drain contacts, field-effect transistors and their preparation, can solve problems affecting the overall performance of the device, etc., to reduce the Schottky barrier height, reduce production costs, and save processes effect of steps

Inactive Publication Date: 2014-12-24
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the contact resistance between the source-drain region connection and the source-drain region increases with the continuous shrinking of the device size, it affects the overall performance of the device.

Method used

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  • Metal source and drain contact, field effect transistor, manufacturing method of metal source and drain contact and manufacturing method of field effect transistor
  • Metal source and drain contact, field effect transistor, manufacturing method of metal source and drain contact and manufacturing method of field effect transistor
  • Metal source and drain contact, field effect transistor, manufacturing method of metal source and drain contact and manufacturing method of field effect transistor

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Embodiment Construction

[0044] In order to make the object, technical solution and advantages of the present invention clearer, various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solution claimed in each claim of the present application can be realized.

[0045] The first embodiment of the present invention relates to a metal source-drain contact. The specific process is as figure 1 shown. A dielectric layer 20 is formed on the substrate 10, and the dielectric layer 20 is provided with a through hole 21 exposing the source region or the drain region. The metal source and drain conta...

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Abstract

The invention relates to the field of semiconductor manufacturing and discloses a metal source and drain contact, a field effect transistor, a manufacturing method of the metal source and drain contact and a manufacturing method of the field effect transistor. A segregation area with doping ions is formed at the junction of metal silicide and a source area or a drain area, the Schottky barrier height can be reduced effectively, and the source and drain contact resistance is reduced greatly. The source area and the drain area are led out through the metal source and drain contact, so that the formed field effect transistor has lower source and drain contact resistance, and the performance of the field effect transistor can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a metal source-drain contact, a field effect transistor and a preparation method thereof. Background technique [0002] The continuous increase of IC integration requires the continuous scaling down of the device size, but the operating voltage of the device sometimes remains unchanged, so that the electric field strength in the actual field effect transistor continues to increase. The high electric field brings a series of reliability problems, which degrades the performance of the device. For example, the parasitic series resistance between the source and drain regions of the field effect transistor will cause the equivalent operating voltage to drop. [0003] Usually, after the device is formed, it is necessary to make source-drain connection lines to lead out the source-drain region of the device. However, since the contact resistance between the connection line o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/78H01L29/41766H01L29/66477
Inventor 许鹏吴东平付超超周祥标
Owner FUDAN UNIV