Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device

A glass composite, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effect of reducing the firing temperature

Active Publication Date: 2014-12-31
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] However, glass materials mainly composed of lead silicate contain lead, which has a large impact on the environment, so it is considered that the use of glass materials mainly composed of lead silicate will be banned in the near future

Method used

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  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device

Examples

Experimental program
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Effect test

Embodiment approach 1

[0094] Embodiment 1 is an embodiment related to the glass compound for semiconductor junction protection. In particular, an embodiment including a glass compound for protecting a semiconductor junction according to Examples 3 to 6 described later.

[0095] The glass compound for protecting a semiconductor junction according to Embodiment 1 is a glass compound for protecting a semiconductor junction used for forming a glass layer for protecting a pn junction in a semiconductor element having a pn junction exposed portion in which a pn junction is exposed, and is composed of a The glass granules are formed without fillers and are produced from a melt obtained by melting a glass raw material. The glass raw material contains at least ZnO, SiO in the following content 2 , B 2 o 3 , Al 2 o 3 , and oxides of at least two alkaline earth metals among BaO, CaO, and MgO, and ZrO 2 and nickel oxide, and substantially free of Pb, As, Sb, Li, Na, K,

[0096] ZnO: 30mol% ~ 60mol%;

...

Embodiment approach 2

[0126] Embodiment 2 is an embodiment related to the glass compound for semiconductor junction protection. In particular, it is an embodiment including the glass compound for protecting a semiconductor junction according to Example 1 described later.

[0127] The glass compound for protecting a semiconductor junction according to the second embodiment basically contains the same components as the glass compound for protecting a semiconductor junction according to the first embodiment, but is different from the semiconductor junction according to the first embodiment in that it does not contain nickel oxide. The protective glass compound is different. That is, the glass compound for protecting a semiconductor junction according to the second embodiment basically contains the same components as the glass compound for protecting a semiconductor junction according to the first embodiment, and is a glass compound for protecting a semiconductor junction made of glass particles. And ...

Embodiment approach 3

[0141] Embodiment 3 is an embodiment related to a glass compound for semiconductor junction protection.

[0142] The glass compound for protecting a semiconductor joint according to the third embodiment basically contains the same components as the glass compound for protecting a semiconductor joint according to the first embodiment, but does not contain ZrO 2 This point is different from the glass compound for semiconductor junction protection concerning Embodiment 1. That is, the glass compound for protecting a semiconductor joint according to Embodiment 2 is a glass compound for protecting a semiconductor joint that is composed of glass particles obtained by melting a glass raw material and does not contain a filler. Liquid production, the glass raw material contains at least ZnO, SiO 2 , B 2 o 3 , Al 2 o 3 , and oxides of at least two alkaline earth metals in BaO, CaO and MgO, nickel oxide, and substantially free of Pb, As, Sb, Li, Na, K.

[0143] In the glass compou...

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Abstract

This glass composition for semiconductor junction protection is a glass composition for semiconductor junction protection for forming a glass layer that protects a pn junction. This glass composition for semiconductor junction protection contains at least ZnO, SiO2, B2O3, Al2O3 and at least two alkaline earth metal oxides selected from among BaO, CaO and MgO, respectively in predetermined amounts, and are composed of fine glass particles that are produced from a melt which is obtained by melting a glass starting material that does not substantially contain Pb, As, Sb, Li, Na and K. This glass composition for semiconductor junction protection does not contain a filler. According to the present invention, a semiconductor device with high reliability can be manufactured using a glass material that does not contain lead. In addition, a layer that is formed of this glass composition for semiconductor junction protection can be fired at a lower firing temperature in comparison to the cases where conventional "glass materials mainly composed of lead silicate" are used, thereby enabling the production of a semiconductor device that has excellent switching characteristics.

Description

technical field [0001] The present invention relates to a glass compound for semiconductor junction protection, a method for manufacturing a semiconductor device, and a semiconductor device. Background technique [0002] There is known a semiconductor device manufacturing method in which a glass layer for passivation covering a pn junction exposed portion is formed in the process of manufacturing a mesa type semiconductor device (for example, refer to Patent Document 1). When using this semiconductor device manufacturing method to manufacture a semiconductor device (Fast Recovery Diode) excellent in switching (swiching) characteristics, the following manufacturing method is used. Hereinafter, such a manufacturing method is referred to as a conventional semiconductor device manufacturing method. [0003] Figure 16 and Figure 17 It is an explanatory diagram showing such a conventional method of manufacturing a semiconductor device. Figure 16 (a)~ Figure 16 (d) and 17(a) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316C03C8/04H01L21/329H01L29/47H01L29/868H01L29/872
CPCH01L21/02142H01L29/08H01L29/0839H01L29/1608H01L29/2003H01L29/6606H01L29/66136H01L29/66363H01L29/66401H01L29/861H01L29/8613H01L21/78C03C8/04C03C3/066C03C8/24H01L23/3178H01L2924/0002H01L21/02161H01L23/291H01L2924/00H01L23/3171
Inventor 小笠原淳伊东浩二六鎗広野
Owner SHINDENGEN ELECTRIC MFG CO LTD
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