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Method for improving stress defects in hcd silicon nitride deposition process

A deposition process, silicon nitride technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as stress defects and quartz boat cracks, and achieve the effect of improving stability and preventing surface cracks

Active Publication Date: 2017-02-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem solved by the present invention provides a method for improving the stress defect caused by the HCD silicon nitride deposition process on the quartz crystal boat of the furnace tube, effectively solving the stress of the HCD silicon nitride process and the crack problem of the quartz crystal boat

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  • Method for improving stress defects in hcd silicon nitride deposition process
  • Method for improving stress defects in hcd silicon nitride deposition process

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Embodiment Construction

[0018] The problem solved by the present invention provides a method for improving the stress defects on the quartz boat of the furnace tube caused by the HCD silicon nitride deposition process, and effectively solves the stress of the HCD silicon nitride process and the cracks of the quartz boat.

[0019] In order to solve the above problems, the present invention provides a method for improving the stress defects on the quartz boat of the furnace tube caused by the HCD silicon nitride deposition process, including:

[0020] Performing a dry purification step to purify and clean the wafer boat;

[0021] Depositing a TEOS buffer layer on the surface of the wafer boat;

[0022] Depositing a DCS SIN layer on the TEOS buffer layer.

[0023] Please refer below figure 2 Shown is a schematic diagram of the structure of a quartz wafer boat according to an embodiment of the present invention.

[0024] First, the surface of the wafer boat 100 is cleaned by dry etching using gas. 2 And N 2 The g...

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Abstract

The invention provides a method for overcoming a stress defect caused by an HCD silicon nitride sedimentation technology on a semiconductor boat of a furnace pipe. The method comprises the steps that dry process purification is carried out, and the semiconductor boat is purified and cleaned; a TEOS buffer layer is sedimentated on the surface of the semiconductor boat; a DCS SIN layer is sedimentated on the TEOS buffer layer. The method for overcoming the stress defect caused by the HCD silicon nitride sedimentation technology on the semiconductor boat of the furnace pipe effectively solves the problem of the stress of the HCD silicon nitride sedimentation technology and the crack of the semiconductor boat.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and in particular to a method for improving stress defects caused by the HCD silicon nitride deposition process on the quartz boat of the furnace tube. Background technique [0002] With the development of semiconductor device technology and higher and higher device performance requirements, the step coverage of silicon nitride film on the sidewall of the gate has become more and more critical. At present, most of the industry has begun to use hexachlorodisilane (HCD) for processes of 65 nm and below. ) And ammonia (NH 3 ) Reaction to grow silicon nitride. [0003] At present, the mainstream HCD machine used in this field is the formula model of Dongdian Electronics. This machine has the characteristics of high output efficiency and good step coverage. It can achieve a production capacity of more than 300 pieces per day. [0004] However, the current furnace tube used in the HCD silicon ni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02H01L21/02164H01L21/0217
Inventor 张召王智苏俊铭倪立华
Owner SHANGHAI HUALI MICROELECTRONICS CORP