Semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problem that the on-resistance cannot be changed afterwards
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no. 1 Embodiment approach ）
[0014] figure 1 It is a schematic sectional view showing the semiconductor device of the first embodiment.
[0015] figure 2 It is a schematic plan view showing the semiconductor device of the first embodiment.
[0016] exist figure 1 shown in figure 2 A cross section along the line A-A' in the active region 1a (first region) of the semiconductor device 1 and a cross section along the line B-B' in the peripheral region 1p (second region) of the semiconductor device 1 are shown. In addition, in figure 1 The left side shows the relationship between the depth and the electric field strength in the active region 1a and the peripheral region 1p when the semiconductor device 1 is turned off. The depth of the semiconductor device 1 refers to the depth near the joint between the n-type semiconductor region 13n and the p-type semiconductor region 13p described later.
[0017] In this embodiment, the direction from the drain electrode 50 toward the semiconductor layer 15 (or the...
no. 2 Embodiment approach ）
[0039] image 3 It is a schematic sectional view showing the semiconductor device of the second embodiment.
[0040] exist image 3 The left side shows the depth in the active region 1 a as a function of the electric field strength when the semiconductor device 2 is turned off. exist image 3 The right side shows the relationship between the depth and the electric field intensity in the peripheral region 1p when the semiconductor device 2 is turned off.
[0041] In the semiconductor device 2, hydrogen is selectively implanted into the active region 1a, and heat treatment is performed. That is, in the semiconductor device 2, in the active region 1a, the semiconductor region 13n has the first portion 11n and the second portion 12n. In the peripheral region 1p, the semiconductor region 13n does not have the first portion 11n. In the peripheral region 1p, the semiconductor region 13n is composed of the second portion 12n.
[0042] In the peripheral region 1p, the impurity co...
no. 3 Embodiment approach ）
[0044] Figure 4 It is a schematic sectional view showing the semiconductor device of the third embodiment.
[0045] exist Figure 4 The left shows the depth in the active region 1 a as a function of the electric field strength when the semiconductor device 3 is turned off. exist Figure 4 The right side shows the relationship between the depth and the electric field strength in the peripheral region 1p when the semiconductor device 3 is turned off.
[0046] In the semiconductor device 3, hydrogen is selectively implanted into the peripheral region 1p, and heat treatment is performed. That is, in the semiconductor device 3, the semiconductor region 13n has the first portion 11n and the second portion 12n in the peripheral region 1p. In the active region 1a, the semiconductor region 13n does not have the first portion 11n. In the active region 1a, the semiconductor region 13n is composed of the second portion 12n.
[0047] The above-mentioned hole current tends to stay in...
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