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Plasma treatment device

A plasma and processing device technology, applied in the field of plasma processing, can solve problems such as high temperature, uncontrollable temperature, and affecting the etching process

Active Publication Date: 2015-01-21
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
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  • Claims
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Problems solved by technology

However, since the side wall material of the reaction chamber is a good conductor of heat, the heating element will also make the temperature outside the reaction chamber too high while heating the plasma inside the reaction chamber. At the same time, the heat provided by the heating element is conducted upwards and downwards, not only It wastes energy and makes the temperature of other parts of the reaction chamber uncontrollable, which affects the progress of the etching process

Method used

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Embodiment Construction

[0019] The present invention discloses a plasma processing device. In order to make the above objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation of the present invention will be described in detail below with reference to the drawings and examples.

[0020] figure 1 It shows a schematic structural diagram of a plasma processing device disclosed in the present invention, especially relates to an inductively coupled plasma processing device, the plasma processing device includes a chamber shell 100 and a reaction chamber 101, and a base 150 is arranged in the reaction chamber 101 Used to support the substrate 200. The cavity shell includes an insulating window 110, and an inductance coil 105 is arranged above the insulating window 115. The inductance coil 105 generates a strong high-frequency alternating magnetic field under the action of a radio frequency power source (not shown in the figure), so that the ...

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Abstract

The invention discloses a plasma treatment device. Plasma in a reaction cavity is heated by arranging a plasma heating ring provided with a heating element, so that the requirement of an etching process on a plasma temperature is met. A heat insulating channel is formed around the heating element to isolate heat generated by the heating element of the plasma heating ring from surrounding components and an external space, so that independent control of the temperature among the components is ensured without consuming heat, and different requirements of different positions on the temperature in a reaction process are met. Heat generated by the heating element is isolated from the external space through the heat insulating channel, so that the threat of the temperature of the external space to operating personnel can be avoided.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to an inductively coupled plasma processing device. Background technique [0002] Plasma processing devices are widely used in the manufacturing process of integrated circuits, such as deposition and etching. Among them, the inductively coupled plasma (ICP, Inductively Coupled Plasma) device is one of the mainstream technologies in the plasma processing device. Its principle is to use radio frequency power to drive the inductively coupled coil to generate a strong high-frequency alternating magnetic The reactive gas is ionized to produce a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the wafer to be processed, causing the morphology of the wafer surface to change. Change, that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32431H01J37/32522H01L21/67011
Inventor 左涛涛吴狄
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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