Electrostatic Discharge Protection Structure

Abstract

The invention discloses an electrostatic discharge protection structure. The protection structure comprises a substrate, a contact region, a first metal oxide semiconductor element, a second metal oxide semiconductor element, a first doping region and a second doping region, wherein the contact region is located in the substrate, the first metal oxide semiconductor element comprises a first drain region with a first conducting type and is located in the substrate, the second metal oxide semiconductor element comprises a second drain region with the first conducting type and is located in the substrate; the first drain region is closer to the contact region in comparison with the second drain region; the first doping region and the second doping region are respectively provided with a second conducting type, and respectively located below the corresponding first drain region and the corresponding second drain region; the area and / or doping concentration of the first doping region is greater than the area and / or doping concentration of the second doping area. Through the change of the area / doping concentration of the doping regions, the difference caused by different distances between the doping regions and the contact region can be modified, breakdown voltages of parasitic bipolar transistors (BJT) in different region can be approximately same, so that the breakover time of each BJT is nearly consistent.

Description

technical field [0001] The invention relates to a semiconductor element, and in particular to an electrostatic discharge protection structure. Background technique [0002] Electrostatic discharge (ESD) is a phenomenon in which charges are rapidly moved (discharged) in a short period of time through a discharge path after accumulating on a non-conductor or an ungrounded conductor. Electrostatic discharge can damage circuits made up of components of integrated circuits. For example, a human body, a machine for packaging integrated circuits, or an instrument for testing integrated circuits are common charged objects. When the aforementioned charged objects come into contact with the chip, it is possible to discharge the chip. The instantaneous power of electrostatic discharge can cause damage or failure of the integrated circuits in the chip. [0003] Generally, the electrostatic discharge tolerance of commercial integrated circuits must pass the human body model (HumanBody ...

AI Technical Summary

Problems solved by technology

Although the finger-shaped protection element can save the die area, this layout method often causes the problem of non-uniform turn-on of the element

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