Unlock instant, AI-driven research and patent intelligence for your innovation.

IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof

A technology of bipolar transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as little effect, high cost, and complicated process

Active Publication Date: 2015-01-21
CSMC TECH FAB2 CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, changing the structure of the passivation layer to solve the high-temperature leakage process is complex, costly, and has little effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof
  • IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof
  • IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Please refer to figure 1 , one embodiment of the present invention provides a method for manufacturing an insulated gate bipolar transistor. The manufacturing method of the insulated gate bipolar transistor includes the following steps:

[0022] Step S110, providing an N-type substrate. The crystal orientation of the N-type substrate is and undergoes an oxidation process. In addition, the N-type substrate is manufactured by the Czochralski method.

[0023] Step S120, implanting a layer of N-type ions on the N-type substrate to form an N+ carrier enhancement region. Such as image 3 As shown, an N+ carrier enhancement region 21 is formed on the N-type substrate 1 . In this embodiment, the N-type ion is phosphorus. When performing the phosphorus ion implantation process, the implantation energy of ion implantation is 40-160KeV, and the implantation dose is 1E11-1E13cm -2 .

[0024] Step S130 , forming an IGBT front structure on the N+ carrier enhancement region 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is an IGBT and a manufacture method thereof. The manufacture method of the IGBT comprises that a layer of N type ions is injected on an N type substrate to form an N+ carrier enhanced area, and front and back side structures of the IGBT are formed. The layer of N type ions is injected on the N type substrate to form the N+ carrier enhanced area, thereby reducing high-temperature leakage current; and thus, the IGBT has the advantage that the high-temperature leakage current is low.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor element, in particular to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] An insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) is a commonly used power switching device controlled by voltage. It has the characteristics of large input capacitance, high input impedance, small driving current, fast speed, high withstand voltage, strong thermal stability, high operating temperature, and simple control circuit. It has become the mainstream device of power electronic devices at this stage. [0003] Since the invention of IGBT devices in the 1980s, they have experienced PT (punch-through, punch-through) type, PT (punch-through, punch-through) type with N+ buffer layer, and NPT (non-punch through non-punch-through) type, etc. A series of evolutions. The thickness of the IGBT chip has also been reduced from the in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0638H01L29/66325H01L29/7393
Inventor 邓小社钟圣荣周东飞王根毅
Owner CSMC TECH FAB2 CO LTD