Method for manufacturing epitaxial structure with reusable substrate
A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of slow stripping speed, aggravate environmental pollution, waste of epitaxial substrates, etc., achieve accelerated stripping speed, increase yield, Solve the effect of slow peeling speed
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[0045]The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0046] refer to figure 1 As shown, the present invention discloses a substrate-reusable high-power light-emitting diode epitaxial structure, including an epitaxial substrate 1, an epitaxial peeling layer 2, and an epitaxial light-emitting structure 3; between the epitaxial substrate 1 and the epitaxial light-emitting structure 3 An epitaxial peeling layer 2 is provided.
[0047] The epitaxial light-emitting structure 3 is composed of a first-type current spreading layer 31 , a first-type confinement layer 32 , an active layer 33 , a second-type confinement layer 34 and a second-type current spreading layer 35 sequentially disposed on the epitaxial peeling layer 2 .
[0048] An epitaxial protective layer 4 is disposed between the epitaxial peeling layer 2 and the epitaxial light emitting structure 3 . The epitaxial protection layer 4 is confi...
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