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Method for manufacturing epitaxial structure with reusable substrate

A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of slow stripping speed, aggravate environmental pollution, waste of epitaxial substrates, etc., achieve accelerated stripping speed, increase yield, Solve the effect of slow peeling speed

Active Publication Date: 2015-02-04
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology

[0004] In the prior art, due to the slow rate of stripping and the low success rate of maintaining the integrity of the epitaxial light-emitting structure after stripping, the substrate of the inverted light-emitting diode is generally removed by etching or grinding, which wastes the epitaxial light-emitting structure. Substrate and aggravated the pollution of the environment during the manufacturing process

Method used

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  • Method for manufacturing epitaxial structure with reusable substrate
  • Method for manufacturing epitaxial structure with reusable substrate
  • Method for manufacturing epitaxial structure with reusable substrate

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Embodiment Construction

[0045]The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0046] refer to figure 1 As shown, the present invention discloses a substrate-reusable high-power light-emitting diode epitaxial structure, including an epitaxial substrate 1, an epitaxial peeling layer 2, and an epitaxial light-emitting structure 3; between the epitaxial substrate 1 and the epitaxial light-emitting structure 3 An epitaxial peeling layer 2 is provided.

[0047] The epitaxial light-emitting structure 3 is composed of a first-type current spreading layer 31 , a first-type confinement layer 32 , an active layer 33 , a second-type confinement layer 34 and a second-type current spreading layer 35 sequentially disposed on the epitaxial peeling layer 2 .

[0048] An epitaxial protective layer 4 is disposed between the epitaxial peeling layer 2 and the epitaxial light emitting structure 3 . The epitaxial protection layer 4 is confi...

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Abstract

The invention discloses a method for manufacturing an epitaxial structure with a reusable substrate. The method comprises the steps of (1) forming a buffer layer, a substrate protection layer, an epitaxial stripping layer, an epitaxial protection layer and an epitaxial light emitting structure at the surface of an epitaxial substrate orderly from bottom to top, (2) carrying out oxidation on the epitaxial stripping layer to form an oxidation stripping layer, (3) carrying out evaporation of metal reflective layer on the second type current expansion layer of the epitaxial light emitting structure, and bonding the metal reflective layer and a substrate, (4) using strong alkali to corrode the oxidation stripping layer and using the corrosion device with a rotation function to corrode the oxidation stripping layer until the epitaxial light emitting structure and the epitaxial substrate are separated to obtain the epitaxial substrate which can be reused. According to the method, the epitaxial layer damage problem caused by stripping a diode can be solved, the substrate can be reused, and the cost is saved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a manufacturing method of an epitaxial structure with a reusable substrate. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of low power consumption, small size and high reliability. As the main light source, they have been developed rapidly. Especially in recent years, the application fields of light-emitting diodes have expanded rapidly. , and the cost is lower. [0003] In the prior art, higher luminous intensity can be obtained by using the chip manufacturing process of the inverted light-emitting diode, but the manufacturing cost of this structure is high. Currently, reducing the cost of the inverted structure chip is mainly achieved by reducing the price of raw materials and increasing the yield. The method of reducing the price of raw materials to reduce the production cost is relatively limited, and the method of producing lig...

Claims

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Application Information

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IPC IPC(8): H01L33/20
CPCH01L33/0093
Inventor 林志伟陈凯轩张永卓祥景姜伟杨凯蔡建九白继锋刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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