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Method for manufacturing lateral double-diffused metal-oxide-semiconductor transistors

A technology of oxide semiconductors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as alignment deviation and achieve the effect of minimum energy consumption requirements

Active Publication Date: 2018-03-13
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In the fourth step of the above-mentioned process method, since the pattern of the region where the gate is located needs to be formed on the barrier layer through a photolithography plate, there is a problem of alignment deviation

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  • Method for manufacturing lateral double-diffused metal-oxide-semiconductor transistors
  • Method for manufacturing lateral double-diffused metal-oxide-semiconductor transistors
  • Method for manufacturing lateral double-diffused metal-oxide-semiconductor transistors

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0024] Due to its radio frequency characteristics, the radio frequency lateral double diffused metal oxide semiconductor transistor (hereinafter referred to as "LDMOS") has extremely high requirements on the gate resistance, and the gate resistance is required to be as small as possible. For this reason, in the manufacturing process of LDMOS, by forming a low-resistance region on the gate, the gate resistance is the parallel resistance of the low-resistance region r...

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Abstract

The invention belongs to the technical field of semiconductor devices and discloses a method for manufacturing a lateral double-diffused metal oxide semiconductor transistor. The method can be used for directly forming a pattern of an area of a grid on a barrier layer by virtue of a manner of grinding the barrier layer above the grid until the grid is exposed, so that the area of the grid does not need to be aligned when a low-resistance area is formed on the grid, the problem of alignment error in a photo-etching process is avoided, and the requirements on smaller wire width and lowest energy consumption of a semiconductor process are met.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a lateral double-diffused metal oxide semiconductor transistor. Background technique [0002] The radio frequency lateral double-diffused metal oxide semiconductor transistor (lateral double-diffused MOS, referred to as "LDMOS") is used in mobile phone base stations, broadcast television and radar and other fields. Different from other power MOS tubes, radio frequency LDMOS has extremely high requirements on gate resistance due to its radio frequency characteristics, and requires the gate resistance to be as small as possible. In order to reduce gate resistance, gate low resistance process must be adopted. Generally, a metal silicide is formed above the area where the gate is located (the gate resistance is the parallel resistance of the metal silicide resistance and the gate resistance, and the resistivity of the metal silicide is very l...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336
CPCH01L21/28158H01L29/66681
Inventor 闻正锋马万里赵文魁
Owner FOUNDER MICROELECTRONICS INT