A method of plasma etching substrate
A plasma and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of exhaustion of photoresist and incomplete etching, so as to reduce photoresist loss and improve selection than the effect
Active Publication Date: 2017-06-27
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
During the etching reaction process, the plasma will etch the photoresist while etching the substrate. If the set process parameters are not appropriate, the photoresist may be consumed before the etching reaction ends. Make the etching unable to complete the established goal
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] The present invention discloses a method for plasma etching a substrate. In order to make the above-mentioned purpose, features and advantages of the present invention more obvious and easy to understand, the specific implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples .
[0024] In the process of using plasma to etch the semiconductor substrate, before the semiconductor substrate is etched, it is first necessary to coat the photoresist on the surface of the substrate, and use the accurate exposure of the photoresist to transfer the desired etching pattern to the semiconductor substrate. On the etching base of the substrate, the photoresist can be used as a mask to cover the area outside the etching area, so as to protect the semiconductor base outside the etching area from being etched. During the etching reaction, the plasma etches the photoresist while etching the substrate. Under the s...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for plasma etching a substrate. By setting the temperature change in a reaction chamber in an etching process, the temperature in the reaction chamber is decreased compared with that in the reaction chamber using a conventional process in an etching process and purposes of reducing photoresist loss under low temperature and increasing a substrate etching selection ratio are achieved. Temperature is used as a main parameter in etching process design. When the thickness of the photoresist of a substrate to be etched is low or the selection ratio of the etching process is highly required, the temperature in part of the process or the whole process is adjusted in order that the temperature in the reaction chamber is decreased in the whole etching process, it is guaranteed that the photoresist cannot be fully lost before the finish of the etching reaction, and the substrate etching selection ratio is increased.
Description
technical field [0001] The invention relates to the technical field of plasma etching technology, in particular to the technical field of plasma etching technology for reducing photoresist loss. Background technique [0002] Plasma processing devices are widely used in the manufacturing process of integrated circuits, such as deposition and etching. Among them, the main principle of the plasma processing device is to generate plasma by ionizing the reaction gas by applying a radio frequency power source. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the semiconductor substrate to be treated, making the surface of the semiconductor substrate In addition, the above-mentioned active ions have higher activity than conventional gaseous reactants, which can promote the chemical reaction between the ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3065
Inventor 李俊良倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA