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A method for making multifunctional combined nanopatterns

A technology of nano-graphics and production methods, which is applied in the manufacture of microstructure devices, exposure devices for photolithography, decorative art, etc., can solve the problems of high cost, immature technology, high cost, etc., and achieve powerful and low-cost effects

Active Publication Date: 2016-08-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The use of electron beam exposure to produce, the cost is too high, and it is not conducive to mass production
However, the use of nanoimprinting also faces the problems of high cost and immature technology.

Method used

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  • A method for making multifunctional combined nanopatterns
  • A method for making multifunctional combined nanopatterns
  • A method for making multifunctional combined nanopatterns

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Embodiment Construction

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0019] see figure 1 and Figure 2-Figure 12 As shown, the invention provides a method for making a multifunctional composite nano-pattern, comprising the following steps:

[0020] Step 1: Spin-coat a layer of photoresist 11 on the substrate 10 (see figure 2 );

[0021] Step 2: Coating a single layer of transparent micro-nanospheres 12 on the photoresist 11; the transparent micro-nanospheres 12 can be PS spheres or SiO 2 Balls and other organic or inorganic transparent micro-nanospheres (see image 3 );

[0022] Step 3: Under the illumination 13 of a predetermined wavelength, the photoresist 11 coated on the substrate 10 is exposed by using the light-gathering effect of the transparent micro-nanosphere 12 to form a p...

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Abstract

The invention discloses a manufacturing method of a multifunctional combined nanometer pattern. The manufacturing method comprises the following steps: spin-coating a layer of photoresist on a substrate, coating a single-deck transparent micro-nanosphere on the photoresist; exposing the photoresist coating the substrate to form a pattern array by using light-gathering effect of the transparent micro-nanosphere under the illumination of a predetermined wavelength; soaking the whole sample with the transparent micro-nanosphere in a developing solution to develop so as to corrode an exposed place of the photoresist; etching the micro-nanosphere by using a dry etching method so as to shrink the micro-nanosphere, thereby producing space between micro-nanospheres; dry etching the photoresist by using the micro-nanosphere as a mask,; removing a residual micro-nanosphere to finish the preparation of the nanometer pattern array. More nanometer patterns with special patterns can be produced by combining the photoetching method using the micro-nanosphere as the lens and the photoetching method using the micro-nanosphere as the mask.

Description

technical field [0001] The invention relates to a micro-nano processing method, in particular to a method for making a multifunctional combined nanometer pattern. Background technique [0002] Science in the 21st century has entered the era of nanoscience. As the size of various devices becomes smaller and smaller, some properties unique to nanometer conditions are gradually developed and utilized, such as photonic crystals, plasmons, etc. However, due to the limitations of the wavelength and volatility of light, traditional lithography is powerless to produce nanometer-scale. And with the development of nanoscience, more and more special nanographs are needed, such as nanorings, nanomoons, nanoclusters, etc. The use of electron beam exposure to produce, the cost is too high, and it is not conducive to mass production. The use of nanoimprinting also faces the problems of high cost and immature technology. Nanosphere lithography has received increasing attention due to its...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00G03F7/20
Inventor 张勇辉魏同波王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI