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A kind of LED chip and its manufacturing method

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light extraction efficiency, achieve the effects of increased optical power, reasonable structural design, and increased adhesion

Active Publication Date: 2017-05-17
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reasons for affecting the escape of photons are: total reflection of photons, most of the photons return to the interior of the semiconductor due to total reflection on the interface between the semiconductor and the outside, and the total reflection light is absorbed by the active layer itself, the substrate, the electrode, etc. and cannot be emitted, so , the external light extraction efficiency of the general LED chip is much lower than the internal quantum efficiency; P-GaN translucent metal contact electrode layer absorbs light, it can absorb about 30% of the outgoing light; N, P electrodes are bonded with solder joints and leads Blocking of outgoing light; absorption of outgoing light by sapphire substrate

Method used

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  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] A kind of LED chip, see figure 2 as well as image 3 , including substrate 1, buffer layer 2, n-GaN layer 3, multi-quantum well layer 4, p-GaN layer 5, P-type electrode 6 and N-type electrode 7, the substrate 1, buffer layer 2, n- The GaN layer 3 , the multi-quantum well layer 4 and the p-GaN layer 5 form a convex mesa 8 , and the overall structure is simplified.

[0042]The upper surface of the convex mesa 8 is provided with a current spreading conductive layer 9, and the current spreading conductive layer 9 and the convex mesa 8 are preferably concentrically arranged; the current spreading conductive layer 9 is provided with The through hole 91 runs through the upper surface and the lower surface thereof, and the central axis of the through hole 91 is preferably arranged parallel to the axis L of the convex table 8 .

[0043] The lower end of the N-type electrode 7 is arranged on the upper surface of the convex mesa 8; a part of the lower end of the P-type electrod...

Embodiment 2

[0056] The difference between this embodiment and Embodiment 1 is: (1) the shape of the P-type electrode 6 is different, specifically the lower end cross-section of the P-type electrode 6 is in the shape of a cat's claw, and the distribution of the cat's claw is dispersed, and the electrode The place in contact with the ITO is farther away from the N electrode, and the current spread distance becomes longer; (2) the position where the cat's claw is facing away from the N electrode, the current spread distance on the ITO surface is elongated.

[0057] Its preparation method is similar to Example 1, and its product structure is detailed in Figure 4 .

[0058] Make 1000 pieces of LED chips of this embodiment, scrape the electrode surface with a scraper to check the adhesion ability of the electrodes, and find that 10 pieces of electrodes are dropped, and the electrode drop ratio is 1.0%; its optical power reaches 19.666mW, which is comparable to that of existing LED chip product...

Embodiment 3

[0060] The difference between this embodiment and Embodiment 1 is: (1) The shape of the P-type electrode 6 is different, specifically: compared with Embodiment 2, the cat's claw is longer, and the contact area between the electrode and ITO is relatively increased; (2) On a plane perpendicular to the axis L, the ratio of the cross-sectional area of ​​the P-type electrode 6 pressing on the current spreading conductive layer 9 to the cross-sectional area of ​​the P-type electrode 6 is 0.2003: 1; (3) The direction of the cat's paw faces the direction of the N electrode.

[0061] Its preparation method is similar to Example 1, and its product structure is detailed in Figure 5 .

[0062] Make 1000 pieces of LED chips of this embodiment, scrape the electrode surface with a scraper to check the adhesion ability of the electrodes, find that there are 12 pieces of electrodes missing, and the ratio of electrode dropping is 1.2%; its optical power reaches 19.500mW, which is different fr...

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Abstract

The invention firstly aims to provide an LED chip and secondly aims to provide a method for manufacturing the LED chip. The LED chip comprises an n-GaN layer, a multiple-quantum well layer, a p-GaN layer, a P (positive)-type electrode, an N (negative)-type electrode, a convex tabletop and the like. The convex tabletop is formed by the n-GaN layer, the p-GaN layer and the like; a current expanding conducting layer is arranged on the upper surface of the convex tabletop, and a through hole which is perforated through the upper surface and the lower surface of the current expanding conducting layer is formed in the current expanding conducting layer; the lower end of the N-type electrode is arranged on the upper surface of the convex tabletop; one part of the lower end of the P-type electrode penetrates the through hole to be arranged on the upper surface of the p-GaN layer, and the other part of the lower end of the P-type electrode is arranged on the upper surface of the current expanding conducting layer. The LED chip and the method have the advantages that the LED chip is reasonable in integral structural design, the electrode dropping proportion of the LED chip can be reduced and is lower than 5%, and the luminous power of the LED chip can be increased by 4.79% approximately; a technology of the method for manufacturing the LED chip is simple, technological parameters are easy to control, and the method brings convenience for large-scale production.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] Compared with the internal quantum efficiency, the external quantum efficiency and light extraction efficiency of GaN-based LEDs still need further technological breakthroughs to improve. The reasons for the low external quantum efficiency and light extraction efficiency of GaN-based LEDs mainly include the absorption of light by lattice defects, the absorption of light by the substrate, the total reflection of light during the exit process, and the waveguide effect in the material layer. Because light extraction efficiency and external quantum efficiency are consistent in nature. The main reasons for affecting the escape of photons are: total reflection of photons, most of the photons return to the interior of the semiconductor due to total reflection on the interface between the semiconductor and the ou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/38H01L33/20H01L33/00
CPCH01L33/0066H01L33/0075H01L33/38H01L2933/0016
Inventor 许顺成艾国齐
Owner XIANGNENG HUALEI OPTOELECTRONICS