Timing sequence DC electrical source for millimeter wave amplifier

Abstract

The invention discloses a timing sequence DC electrical source for a millimeter wave amplifier, and relates to DC electrical sources. The timing sequence DC electrical source for the millimeter wave amplifier comprises an adjustable three-terminal voltage stabilizer, a first low dropout voltage stabilizer, a second low dropout voltage stabilizer, a voltage regulator circuit and a voltage converter. The voltage output end of the adjustable three-terminal voltage stabilizer is connected with the voltage input end of the first low dropout voltage stabilizer, and the voltage output end of the first low dropout voltage stabilizer is connected with the positive electrode of a load. The voltage output end of the second low dropout voltage stabilizer is connected with the voltage input end of the voltage converter, the voltage output end of the voltage converter is connected with the voltage input end of the voltage regulator circuit, and the signal output end of the voltage regulator circuit is connected with the signal input end of the adjustable three-terminal voltage stabilizer. The voltage output end of the voltage converter is further connected with the negative electrode of the load. The timing sequence DC electrical source which is manufactured through the switching characteristic of an audion can well prevent surge voltages from damaging a chip at the moment of startup and shutdown, the manufacturing cost is low, and performance is stable.

Description

technical field [0001] The invention relates to a DC power supply, in particular to a sequential DC power supply for millimeter wave amplifiers. Background technique [0002] Millimeter-wave amplifiers require high input impedance, high gain, and small size. For this reason, most amplifiers are built with dedicated chips, and the amplifiers integrated with dedicated chips are field effect transistors. The size of the field effect transistor in the modern manufacturing process is very small, and the distance between the gate and the source, the drain and the source is very small, so that a strong electric field is generated under a small voltage to break down the field effect transistor, resulting in chip damage , the system does not work. [0003] In the project, it was found that the system was often damaged at the moment of switching on and off. Through analysis, the surge voltage during switching on and off damaged the system. How to avoid the damage to the chip caused ...

AI Technical Summary

Problems solved by technology

The size of field effect transistors in modern manufacturing processes is very small, and the distance between gate and source, drain and source is very small, so a strong electric field is generated under small voltage to break down field effect transistors, resulting in chip damage , the system does not work

[0003] In the project, it is found that the system is often damaged at the moment of switching on and off. Through analysis, the surge voltage will damage the system when switching on and off.

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