Image sensor and fabricating method of image sensor

一种影像感测器、制造方法的技术，应用在半导体器件、电固体器件、辐射控制装置等方向，能够解决减少感光区域面积、增加暗电流与白像素、高漏电流等问题，达到减少光晕现象的效果

Active Publication Date: 2015-02-25
HIMAX IMAGING LIMITED
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  • Description
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  • Application Information

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Problems solved by technology

However, this solution has many disadvantages, such as high leakage current from the transfer gate channel to the photodiode area, and a large increase in dark current and white pixels. In addition, the full well capacity (FWC ) is also a trade-off in this solution
Although in order to solve the problem of dark current, a dedicated anti-halation drain can be designed, but this will reduce the area of ​​the photosensitive area

Method used

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  • Image sensor and fabricating method of image sensor
  • Image sensor and fabricating method of image sensor
  • Image sensor and fabricating method of image sensor

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Embodiment Construction

[0049] Certain terms are used in this specification and the following claims to refer to specific components, but those with ordinary knowledge in the art should understand that hardware manufacturers may use different terms to refer to the same component. Subsequent claims do not use the difference in name as the method of distinguishing components, but the difference in function of the components as the criterion for distinguishing. The "comprising" mentioned in the entire specification and subsequent claims As an open-ended term, it should be interpreted as "including but not limited to".

[0050] Please refer to Figure 6 , Figure 6 What is shown is a simplified schematic cross-sectional view of an image sensor 500 according to an embodiment of the present invention, as shown in FIG. Figure 6 As shown, the image sensor 500 includes: a P-type substrate 510, a P-type epitaxial layer (epitaxial layer) 520, two photosensitive regions 530, 532, two P-type well regions 540, ...

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Abstract

The present invention provides an image sensor and a fabricating method of the image sensor. The image sensor comprises: a first type epitaxial layer, a photodiode region, a first type well region, a gate region of a source follower transistor, and a first type implant isolation region. The first type well region is formed within the first type epitaxial layer with a first horizontal distance to the photodiode region and a vertical distance to a surface of the first type epitaxial layer. The gate region of a source follower transistor is formed on the surface of the first type epitaxial layer and above the first type well region, and has a second horizontal distance to the photodiode region. There is a distance between the first type implant isolation region and the first type well region as an anti-blooming path.

Description

technical field [0001] The present invention relates to an image sensor and a manufacturing method of the image sensor, in particular to a photoresisting device that can be formed between the source follower (source follower) transistor channel and the photosensitive region. An image sensor for reducing the blooming phenomenon by an anti-blooming path and a method for manufacturing the image sensor. Background technique [0002] Complementary MOSFET image sensors (CMOS Image Sensors, CIS) have been widely used in many applications, such as mobile phones, video devices, security systems, toys, medical equipment and so on. The next wave of large-scale applications of CMOSFET image sensors will appear in automotive-related applications, which can be used to assist the driver's vision and movement for safer and more relaxed driving experience. [0003] However, the requirements for automotive image sensors are very high. These requirements are usually based on the harsh operat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L31/18H01L31/0352H01L27/14616H01L27/1463H01L27/14654H01L27/14689H01L31/1136
Inventor 吴扬郁飞霞依那.派翠克张宇轩
Owner HIMAX IMAGING LIMITED
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