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Amoled device structure and its manufacturing method

A technology of device structure and manufacturing method, applied in the field of OLED display devices, can solve the problems of high resistance, poor uniformity and large difference in brightness of AMOLED screen, etc.

Active Publication Date: 2017-07-21
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a top-emitting AMOLED, the cathode layer is usually a thin film formed of metals such as Mg and Ag. Because it needs to have light-transmitting properties, it must be made very thin, resulting in high resistance.
The cathode layer is connected to the negative driving voltage wiring around the substrate. If the cathode resistance is large, the difference between the cathode voltage near the substrate and the cathode voltage in the middle of the substrate will be large, resulting in poor brightness uniformity of the AMOLED screen.
Especially for large-size AMOLED devices, this problem is more obvious

Method used

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  • Amoled device structure and its manufacturing method
  • Amoled device structure and its manufacturing method
  • Amoled device structure and its manufacturing method

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Embodiment Construction

[0026] like figure 1 Shown is a schematic diagram of reducing the resistance of the cathode layer of the AMOLED display. The AMOLED display screen includes an AMOLED device structure and other related components. The AMOLED device structure includes a cathode layer 100 , an organic light emitting layer 200 and an anode layer 300 stacked in sequence. The cathode layer 100 is connected to the negative electrode of the driving voltage V−, and the anode layer 300 is connected to the positive electrode of the driving voltage V+. The driving voltage excites the organic light emitting layer 200 to emit light to form a pixel to emit light. The sub-pixels of each pixel unit use the same cathode voltage and different anode voltages to make the sub-pixels emit color light with different brightness. Since different points on the cathode layer 100 have different distances from the connection terminal of the negative electrode of the driving voltage at the edge of the display screen, the...

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Abstract

The invention discloses an AMOLED device structure, which comprises a driving voltage and a cathode layer, an organic light-emitting layer and an anode layer which are sequentially stacked, the cathode layer is connected to the negative electrode of the driving voltage, and the anode layer is connected to the positive electrode of the driving voltage. It is characterized in that the The AMOLED device structure further includes a cathode auxiliary layer, and the cathode auxiliary layer is connected to the cathode layer and the negative electrode of the driving voltage. A method for manufacturing the above-mentioned AMOLED device structure is also disclosed. The above-mentioned AMOLED structure and its manufacturing method can solve the problem of excessive cathode resistance caused by a thin cathode or a large display screen by providing a cathode auxiliary layer in the original structure.

Description

technical field [0001] The invention relates to an OLED display device, in particular to an AMOLED device structure and a manufacturing method thereof. Background technique [0002] AMOLED (Active Matrix Organic Light Emitting Diode, Active Matrix Organic Light Emitting Diode), compared with traditional LCD panels, has many advantages such as low drive, low power consumption, self-illumination, fast response, high contrast, and wide viewing angle. won widespread attention. [0003] In traditional technology, AMOLED usually consists of an anode layer, a cathode layer, and an organic light-emitting layer sandwiched between the anode layer and the cathode layer. When appropriate voltages are applied to the anode layer and the cathode layer, the middle organic light-emitting layer is excited to emit light autonomously. In a top-emitting AMOLED, the cathode layer is usually a thin film formed of metals such as Mg and Ag, which is made very thin due to its light-transmitting pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/80H10K50/824H10K2102/302H10K71/00
Inventor 赵海廷魏朝刚刘青刚
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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