4results about How to "The same thickness" patented technology

This invention belongs to the field of brazing materials technology, and relates to a composite structure welding strip, its preparation method, and its application. A composite structure welding strip is prepared by ultrasonic welding or ultrasonic hot rolling of a first surface layer, a core layer, and a second surface layer. The first and second surface layers are metal alloy foil strips prepared by a strip spinning method. The first and second surface layers, by mass percentage, consist of the following components: Si 11-13%, Eu 0.05-2%, with the balance being Al. The core layer is porous foamed copper, accounting for 4-20% of the total mass of the composite structure welding strip. The thickness of the porous foamed copper is 30-60 μm. The thickness of the composite structure welding strip is 80-120 μm. This composite structure welding strip, as a thin-strip welding material, has a low melting point, good flexibility, can be prepared into rolls, exhibits strong interfacial bonding, a short welding stroke, good fluidity, and high spread rate, thus improving the performance of brazed joints.

This invention relates to the field of semiconductor manufacturing and discloses a method for depositing carbon film on a trench device and the trench device itself. The method includes spin-coating a photoresist layer on the wafer surface of the trench device to form a first wafer; depositing a first carbon film of thickness T1 on the first wafer to form a second wafer; removing the photoresist layer and carbon film layer deposited on the surface of the second wafer to form a third wafer; and depositing a second carbon film of thickness T2 on the third wafer to form a target wafer, where c is the step coverage of the trench device. Through these two carbon film depositions, the carbon film thickness is made the same on the wafer surface, trench sidewalls, and trench bottom of the trench device, resulting in the same carbon protection capability and ensuring the consistency of carbon protection capability at different locations of the trench device.

This invention discloses an electroplating apparatus and an electroplating production line, comprising: an electroplating tank and a clamping and conveying structure; wherein, the clamping and conveying structure is disposed on the open side of the electroplating tank; the clamping and conveying structure conveys the film to be coated along the conveying direction, and the clamping and conveying structure includes at least two sets of clamping and conveying mechanisms; each clamping and conveying mechanism includes an electroplating clamp, a closing clamp assembly, and an opening clamp assembly; on one clamping and conveying mechanism, the closing clamp assembly and the opening clamp assembly are disposed at both ends of the clamping and conveying mechanism along the conveying direction; along the conveying direction of the film to be coated, the closing clamp assembly and the opening clamp assembly of two adjacent clamping and conveying mechanisms are spaced apart and form an adjustable interval. This structure, by providing an adjustable interval, corrects the error caused by the asynchronous electroplating clamps in the previous clamping and conveying mechanism when the film to be coated enters the next stage of the clamping and conveying mechanism; thus greatly solving the synchronization problem.

This invention relates to the field of plasma chemistry and discloses a high-throughput plasma reaction device and a method for decomposing hydrogen sulfide, comprising: an inner cylinder (1) containing reaction tubes (14); an outer cylinder (2) nested outside the inner cylinder (1); a central high-voltage electrode (3); grounding electrodes (4) respectively surrounding or forming sidewalls on the outer walls of each of the reaction tubes (14); a blocking medium (6) disposed on at least a portion of the outer surface of the central high-voltage electrode (3); the ratio between the distance L1 between the outer wall of the blocking medium and the inner wall of the grounding electrode and the length L2 of the discharge region is: L1:L2 = 1:(0.5~6000). The high-throughput plasma reaction device provided by this invention can achieve continuous and stable hydrogen sulfide decomposition process at a significantly higher hydrogen sulfide conversion rate, and the device can achieve long-term operation.