Micromechanical gyroscope based on tunnel magnetoresistive effect

Abstract

The invention discloses a micromechanical gyroscope based on a tunnel magnetoresistive effect. The main structure of the micromechanical gyroscope comprises a base plate, a liner frame body, a permanent magnet and a micromechanical gyroscope angle speed sensitive body, wherein the liner frame body is arranged above the base plate and is connected with the base body; the permanent magnet is arranged at the central position of a rectangular groove formed by the base plate and the liner frame body; the micromechanical gyroscope angle speed sensitive body is arranged above the liner frame body and is connected with the liner frame body; the micromechanical gyroscope angle speed sensitive body comprises a sensitive measuring body which is correspondingly formed in the upper side of the rectangular groove, and the upper surface of the sensitive measuring body is provided with a tunnel magnetic sensitive resistor; and the magnetic sensitive resistor corresponds to the position of the permanent magnet. The tunnel magnetic sensitive resistor can be vibrated along the sensitive measuring body in the direction vertical to the direction of the upper surface of the permanent magnet. The micromechanical gyroscope disclosed by the invention adopts a whole structure design, has a reasonable and compact structure, has a simple detection circuit, is convenient to use, has good reliability and is suitable for microminiaturization.

Description

technical field [0001] The invention relates to the related field of micro-inertial navigation technology, in particular to a micro-mechanical gyroscope based on the tunnel magnetoresistance effect. Background technique [0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is realized based on the principle of piezoresistive effect of highly doped silicon. The pressure sensitive device formed by highly doped silicon has a strong dependence on temperature. The bridge detection circuit composed of pressure-sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of the device, its accuracy is reduced due to the reduction of the effective capacitance area Difficult to improve. [0003] The measurement of the angular velocity of the micro-mechanical gyroscope is...

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Problems solved by technology

[0002] At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is realized based on the principle of piezoresistive effect of highly doped silicon. The pressure sensitive device formed by highly doped silicon has a strong dependence on temperature. The bridge detection circuit composed of pressure-sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of the device, its accuracy is reduced due to the reduction of the effective capacitan

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