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A nio/cdse/mos 2 Layered composite photocathode and its preparation method

A photocathode, composite technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., to achieve the effect of facilitating electron transmission, shortening distance, and simple and easy preparation method

Inactive Publication Date: 2018-02-16
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a half-reaction for hydrogen production, the construction of efficient, low-cost, and stable photocathode still faces great challenges

Method used

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  • A nio/cdse/mos <sub>2</sub> Layered composite photocathode and its preparation method
  • A nio/cdse/mos <sub>2</sub> Layered composite photocathode and its preparation method
  • A nio/cdse/mos <sub>2</sub> Layered composite photocathode and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0030] 1. The preparation method of the novel photocathode CdSe / NiO electrode, which is specifically prepared according to the following steps:

[0031] (1) Surface pretreatment of ITO conductive glass:

[0032] The pretreated ITO conductive glass was first soaked in absolute ethanol and acetone for two hours, and then heated and refluxed for 15 minutes in a 2 mol / L potassium hydroxide solution in isopropanol.

[0033] (2) Preparation of NiO thin films by hydrothermal method

[0034] Put ITO glass into 0.25mol / L Ni(NO 3 ) 2 ·6H 2 In the mixed aqueous solution of O and 0.25mol / L hexamethylenetetramine, heated at 100°C for 12min, taken out, washed with deionized water five times, dried, and calcined at 300°C for 30min in a muffle furnace to obtain NiO / ITO electrode.

[0035] (3) NiO composite electrode sensitized by cadmium selenide (CdSe) was prepared by ion alternating adsorption method

[0036] Immerse the ITO / NiO electrode sequentially in 0.03mol / LCd 2+ and 0.03mol / L...

Embodiment 2

[0042] 1. Adopt MoS 2 As a cocatalyst supported on the surface of CdSe / NiO electrode, a more efficient photocathode MoS was prepared 2 / CdSe / NiO, specifically prepared as follows:

[0043] (1) Surface pretreatment of ITO conductive glass:

[0044] The pretreated ITO conductive glass was first soaked in absolute ethanol and acetone for two hours, and then heated and refluxed for 15 minutes in a 2 mol / L potassium hydroxide solution in isopropanol.

[0045] (2) Preparation of NiO thin films by hydrothermal method

[0046] Put ITO glass into 0.25mol / L Ni(NO 3 ) 2 ·6H 2 In the mixed aqueous solution of O and 0.25mol / L hexamethylenetetramine, heated at 100°C for 12min, taken out, washed with deionized water five times, dried, and calcined at 300°C for 30min in a muffle furnace to obtain NiO / ITO electrode.

[0047] (3) NiO composite electrode sensitized by cadmium selenide (CdSe) was prepared by ion alternating adsorption method

[0048] Immerse the ITO / NiO electrode sequent...

Embodiment 3

[0056] Layered Composite Photocathode NiO / CdSe and NiO / CdSe / MoS 2 Comparison of photoelectric hydrogen production performance under different conditions and the proposed photoelectric catalytic hydrogen production mechanism.

[0057] A mixed aqueous solution (pH=6) of 0.30mol / L hexamethylenetetramine, 0.10mol / L hydrochloric acid and 0.20mol / L potassium chloride was used as the electrolyte solution, a 300W xenon lamp was used as a simulated light source, and Ag / AgCl electrodes were used as Reference electrode, platinum mesh as counter electrode, as-prepared CdSe / NiO and MoS 2 The / CdSe / NiO electrode was used as the working electrode, and the photoelectric hydrogen production experiment was performed on a CHI600D electrochemical instrument. The amount of photocatalytic hydrogen production was detected by gas chromatography with a thermal conductivity detector. The composite photocathode of the present invention CdSe / NiO and MoS 2 Comparison of photoelectric hydrogen productio...

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Abstract

The invention discloses a NiO / CdSe / MoS2 laminar composite photocathode and a preparation method thereof. The preparation method comprises the following steps: (1) with ITO conductive glass as a base, preparing a uniform and consistent nickel oxide layer employing a hydrothermal process; (2) loading cadmium selenide on the surface of nickel oxide by adopting an ion alternate adsorption method; and (3) with a NiO / CdSe electrode as a cathode, and (NH4)2[MoS4] as a deposition liquid, depositing MoS2 particles on the surface of the NiO / CdSe electrode by adopting a light-assisted potentiostatic deposition method, so as to obtain a MoS2-modified electrode. According to the method for preparing the photocathode, the amounts of an absorption agent and a cocatalyst are controllable; and under visible light irradiation, the composite photocathode shows good photoelectrocatalytic activity and visible light response characteristics, is stable in performance, and can be effectively applied to the field of photoelectrocatalysis of water decomposition to produce hydrogen.

Description

technical field [0001] The invention relates to the technical field of semiconductor photoelectric catalytic decomposition of water for hydrogen production, in particular to a layered composite electrode and a preparation method thereof. Background technique [0002] As a future energy carrier, hydrogen has received extensive attention due to its clean nature. One of the efficient and potential hydrogen production methods is photoelectric splitting of water to produce hydrogen, which can capture and store solar energy in the simplest chemical bond (H 2 ) without any undesired contaminants. The optoelectronic device is composed of two different electrodes: the photoanode and the photocathode, where the oxidation and reduction reactions of water take place, respectively. As a hydrogen-producing half-reaction, the construction of efficient, low-cost, and stable photocathodes still faces great challenges. [0003] As a P-type semiconductor that transfers holes, NiO has a wide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/06C25B1/04
CPCY02E60/36
Inventor 董玉明陈艳美蒋平平王光丽毋瑞仙
Owner JIANGNAN UNIV