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Three-dimensional semiconductor device and three-dimensional logic array structure thereof

A technology of logic array and array structure, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as increased process cost and expensive production line

Active Publication Date: 2015-04-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since both the memory array and the peripheral circuitry require support for the manufacturing steps, the production line used to implement the memory device may be expensive or compromised by the circuitry required to manufacture the peripheral circuitry
This will lead to the use of higher-end technology to manufacture integrated circuits for memory devices, resulting in higher process costs

Method used

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  • Three-dimensional semiconductor device and three-dimensional logic array structure thereof
  • Three-dimensional semiconductor device and three-dimensional logic array structure thereof
  • Three-dimensional semiconductor device and three-dimensional logic array structure thereof

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Embodiment Construction

[0036] The following is a detailed description of various embodiments, which use a design in which a three-dimensional logic array structure is disposed between an array structure and a peripheral circuit structure to reduce manufacturing costs. However, the embodiments are only used for illustration and shall not limit the scope of protection of the present invention. In addition, the drawings in the embodiments omit unnecessary elements to clearly show the technical characteristics of the present invention.

[0037] Please refer to figure 1 , which shows a schematic diagram of a three-dimensional logic array structure (3D logic array structure) 100 . The three-dimensional logic array structure 100 includes a semiconductor stack 110 , two gate electrodes 121 , 122 , an input electrode 130 , two gate electrodes 141 , 142 and an output electrode 150 . The gates 121 and 122 are disposed on the semiconductor stack 110 . Each gate 121 , 122 is connected to one of the gate elect...

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Abstract

The invention discloses a three-dimensional semiconductor device and a three-dimensional logic array structure thereof. The three-dimensional semiconductor device comprises an array structure, a peripheral circuit structure and the three-dimensional logic array structure. The array structure has Y first contacts which are located on one side of the array structure. Y ranges between M<N-1> and M<N>, Y, M and N are natural numbers, and M is larger or equal to 2. The three-dimensional logic array structure comprises N groups of gate electrodes, one input electrode and Y output electrodes. Each group of gate electrode has M gate electrodes. The Y output electrodes are connected to the Y contacts. The M*N gate electrodes and the input electrode are connected to the peripheral circuit structure.

Description

technical field [0001] The present invention relates to a semiconductor device and its logic array structure, and in particular to a three-dimensional semiconductor device and its three-dimensional logic array structure. Background technique [0002] When manufacturing high-density memory devices, the data storage capacity per unit area on the integrated circuit will be a key indicator. Therefore, when the critical dimension technology of the memory device has reached the bottleneck, in order to achieve a higher storage density per bit and reduce the production cost per bit, it is generally recommended to stack multiple levels of memory cells. In addition, new memory technologies are being developed, including phase change memory (phase change memory), ferromagnetic memory (ferromagnetic memory), metal oxide based memory (metal oxide based memory) and so on. [0003] Memory technology requires a series of different process steps, followed by the fabrication of minor periphe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/10H01L21/82
Inventor 陈士弘
Owner MACRONIX INT CO LTD