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A kind of copper indium gallium selenide thin film and preparation method thereof

A technology of copper indium gallium selenide and thin film, which is applied in the field of copper indium gallium selenide thin film and its preparation, can solve the problems of restricting large-scale application and production, and achieve the effect of easy to realize large area deposition, controllable composition and high efficiency

Active Publication Date: 2017-05-24
SHENZHEN DANBANG INVESTMENT GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, new technical contradictions have arisen: KCN, as a highly toxic chemical substance, greatly limits the large-scale application and production of copper indium gallium selenide prepared by electrochemical deposition.

Method used

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  • A kind of copper indium gallium selenide thin film and preparation method thereof
  • A kind of copper indium gallium selenide thin film and preparation method thereof
  • A kind of copper indium gallium selenide thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Cu (copper) with a thickness of 50 nm is plated on a Mo (molybdenum) glass substrate by using a sputtering process. When the solute composition is 0.15mol / L Cu(NO 3 ) 2 , 0.30mol / L InCl 3 , 0.5mol / L GaCl 3 , 0.30mol / L H 2 SeO 3 , 1mol / L Potassium chloride, in the 500ml aqueous solution of 1mol / L trisodium citrate, its pH is adjusted to 0.3 with dilute hydrochloric acid, forms the required electrolytic solution system of step S2; With Cu-plated Mo glass as working electrode, The large-area Pt mesh is the counter electrode, and the saturated calomel electrode (SCE) is the reference electrode; set the potential of the working electrode to 0.5V (between the SCE and the SCE), the temperature of the electrolyte system is 80°C, and the working electrode is the copper-plated molybdenum substrate Electrochemical deposition (deposition time 10 minutes) of copper-depleted copper, indium, gallium, and selenium was carried out, and then the deposited molybdenum substrate was pl...

Embodiment 2

[0039] In this embodiment, a Cu layer with a thickness of 105 nm is plated on the Mo glass substrate by using an electrochemical deposition process. The solute composition is 0.02mol / L CuSO 4 , 0.04mol / L In 2 (SO 4 ) 3 , 0.1mol / L Ga 2 (SO 4 ) 3 , 0.04mol / L SeO 2 , in the 500ml dimethyl sulfoxide (DMSO) of 1mol / L sodium sulfate and water mixed system, its pH is adjusted to 13 with sodium hydroxide, forms the required electrolytic solution system of step S2; With Cu-plated Mo glass as The working electrode, the large-area Pt mesh as the counter electrode, and the saturated calomel electrode (SCE) connected to the double-salt bridge system as the reference electrode. Adjust the potential of the working electrode to -2.5V (with SCE), and the temperature of the electrolyte system is 80°C. Electrochemical deposition (deposition time 90 minutes) of copper-poor copper, indium, gallium, and selenium is carried out on the substrate of the working electrode, and then the depositio...

Embodiment 3

[0041] Dimethylformamide (DMF) was used to replace dimethyl sulfoxide (DMSO) and water in Example 2, and other process parameters were the same as in Example 2. Finally, a copper-poor copper indium gallium selenide semiconductor thin film material can be prepared. Observation of film morphology by SEM (scanning electron microscope), it is found that the CIGS film crystal particles prepared in this embodiment are such as figure 1 The crystalline grains of the films shown are large.

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Abstract

The invention discloses a CIGS (Copper Indium Gallium Selenide) film and a preparation method thereof. The preparation method comprises the following steps: S1) plating one layer of copper with the thickness of 10-1000nm on a molybdenum substrate; and S2) in an electrolyte system, adopting an electrochemical deposition method to carry out deposition on the molybdenum substrate subjected to copper plating processing in the step S1) to a form poor-copper CIGS film. When the method is adopted to prepare a light absorption layer material CIGS film used for a solar battery, the shortages of complex technology and equipment, high cost, difficulty in large-scale production since a PVD (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method is adopted can be avoided, a problem that a traditional electrochemical deposition method must use virulent etching agent can be effectively overcome, the large-area continuous deposition etching-free preparation of the CIGS film is realized, the CIGS film can be favorably subjected to large-scale industrial popularization and application, and an etching-free poor-copper CIGS film which has equivalent quality with a traditional electrochemical deposition KCN (Potassium Cyanide) etching copper-rich film is obtained.

Description

technical field [0001] The invention relates to a light-absorbing layer of a solar cell, in particular to a copper indium gallium selenide thin film used as a light-absorbing layer of a solar cell and a preparation method thereof. Background technique [0002] CuInSe 2 (CIS) thin film solar cells have become one of the most important and most promising solar cells, CuInSe 2 The thin film is a direct energy gap semiconductor material with an energy gap of 1.05eV, and can be formed by doping Ga to form copper indium gallium selenide Cu(In,Ga)Se 2 (CIGS) enables the continuous adjustment of the energy gap width within 1.05-1.67eV, which is suitable for the photoelectric conversion requirements of sunlight; copper indium gallium selenide Cu(In,Ga)Se 2 The film has a high light absorption coefficient (up to 10 5 cm -1 ), and stable performance, no light attenuation effect, so it has been widely concerned by the photovoltaic industry. [0003] At present, there are vacuum and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP