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Measurement method of nanowire bandgap distribution

A measurement method, nanowire technology, applied in semiconductor/solid-state device testing/measurement, material analysis by measuring secondary emissions, image analysis, etc., can solve low efficiency, unsuitable for large-scale detection, and atomic force microscope shooting time Long-term problems, to achieve the effect of fast imaging speed

Active Publication Date: 2017-04-05
TSINGHUA UNIV +1
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Problems solved by technology

However, due to the long shooting time of AFM and the analysis of only a few semiconducting single-walled carbon nanotubes, this method is inefficient and not suitable for large-scale detection

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  • Measurement method of nanowire bandgap distribution
  • Measurement method of nanowire bandgap distribution
  • Measurement method of nanowire bandgap distribution

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Embodiment Construction

[0018] The method for measuring the nanowire bandgap distribution provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] See figure 1 , a specific embodiment of the present invention provides a method for measuring the bandgap distribution of nanowires, comprising the following steps:

[0020] S1, providing a substrate 100, forming a plurality of nanowires 102 on the surface of the substrate 100, and the plurality of nanowires 102 are parallel to the surface of the substrate 100;

[0021] S2, forming at least one metal electrode 104 on the surface of the substrate 100, and in contact with the plurality of nanowires 102;

[0022] S3, taking a scanning electron microscope (Scanning Electron Microscope, SEM) photo of the above-mentioned substrate 100 formed with a plurality of nanowires 102 and at least one metal electrode 104; and

[0023] S4, analyzing the above scanning elec...

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Abstract

A method for evaluating bandgap distributions of nanowires is provided. First, a plurality of nanowires located on a surface of a substrate is provided. Second, a metal electrode on the surface and electrically connected to the plurality of nanowires is provided. Third, a SEM image is taken on the plurality of nanowires and the metal electrode. Fourth, the bandgap distributions of the plurality of nanowires are evaluated through the SEM image.

Description

technical field [0001] The invention relates to a method for measuring the semiconductivity of materials, in particular to a method for measuring the semiconductivity of nanowires. Background technique [0002] Nanowires, such as silicon nanowires, silicon dioxide nanowires, zinc oxide nanowires, carbon nanotubes, etc., have quasi-one-dimensional structures and unique electrical properties. Research work on the application of nanowires in electronic devices, field emission technology, biological drug loading, hydrogen storage technology and many other fields has been carried out. [0003] Taking carbon nanotubes as an example, carbon nanotubes can be divided into single-wall carbon nanotubes, double-wall carbon nanotubes and multi-wall carbon nanotubes. Among them, single-wall carbon nanotubes are excellent one-dimensional nanomaterials because of their high It is used to manufacture electronic devices such as field effect transistors and thin film transistors due to its hi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/22
CPCG06T7/0006G06T2207/10061G06T2207/30148H01L22/12
Inventor 何宇俊李东琦张金张丽娜姜开利范守善
Owner TSINGHUA UNIV