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DRAM expansion structure and DRAM expansion method

A technology of expanding structure and expanding method, which is applied in the field of semiconductor memory, can solve data reliability problems and other problems, and achieve the effect of improving reliability, simple structure, and simplified structure

Inactive Publication Date: 2015-04-29
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the application range of DRAM becomes wider and wider, in many portable, low power consumption, and high reliability fields, it often requires very complicated peripheral circuit board design to complete the expansion of DRAM, and DRAM with extended multi-data bit width often has data reliability issues

Method used

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  • DRAM expansion structure and DRAM expansion method
  • DRAM expansion structure and DRAM expansion method
  • DRAM expansion structure and DRAM expansion method

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Embodiment Construction

[0018] The present invention will be described in more detail below in conjunction with the accompanying drawings.

[0019] Such as figure 1 with figure 2 As shown, the present invention achieves system simplification and reliability improvement by co-integrating and packaging multiple DRAM chips and auxiliary ASICs.

[0020] In the DRAM extension structure of the present invention, a plurality of DRAM chips and a logic chip are jointly packaged in the same chip, and the logic chip includes a data integration module, the data bits of the data integration module are respectively connected with the data bits of each DRAM chip, and the logic The chip is provided with instruction bits and address bits, and the instruction bits and address bits of the logic chip are respectively connected to each DRAM chip; the data integration module controls multiple DRAM chips in parallel, and when writing data, each data segment of the parallel data is parallel and simultaneously Write to ea...

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Abstract

The invention provides a DRAM expansion structure and a DRAM expansion method, wherein the DRAM expansion structure comprises a plurality of DRAM chips which are packaged in a chip together, and a logic chip; the logic chip comprises a data integration module; the data integration module is used for controlling the plurality of DRAM chips in parallel; when data is written, all data segments of the parallel data are written into all the DRAM chips in parallel at the same time; when the data is read, the data of all the DRAM chips can be read at the same time; the parallel data with wide data bit can be output by data integration; therefore, the wider data bit width can be realized, and the structure of the existing data extension system can be simplified.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to a DRAM extension structure and a DRAM extension method. Background technique [0002] When DRAM is used, multiple chips work at the same time, which brings larger buffer space and faster data throughput to the system. In traditional DRAM integration, if a wider data bit width is to be achieved, it often needs to be realized through a special circuit panel such as a memory stick. As the application range of DRAM becomes wider and wider, in many portable, low power consumption, and high reliability fields, it often requires very complicated peripheral circuit board design to complete the expansion of DRAM, and DRAM with extended multi-data bit width often has data Reliability issues. Contents of the invention [0003] The purpose of the present invention is to overcome the defects of the prior art, and provide a DRAM expansion structure and a DRAM expansion method with simpl...

Claims

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Application Information

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IPC IPC(8): G11C11/4063G11C29/42
Inventor 亚历山大
Owner XI AN UNIIC SEMICON CO LTD
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