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A Method for Eliminating the Agglomeration of Microparticles on the Surface of 12-Inch Monocrystalline Silicon Epitaxial Wafer

A technology of monocrystalline silicon and epitaxial wafers, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve simple process, improve production pass rate, and eliminate the effect of surface particle agglomeration

Active Publication Date: 2017-04-05
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the increase in the size of single crystal silicon wafers, the internal defects of single crystal silicon and the surface defects caused by subsequent processing also increase. In order to obtain polished silicon wafers with good surface conditions and fewer defects, it is necessary to improve the subsequent polishing or annealing process. Further improve the surface state of silicon wafers and improve the surface quality of polished silicon wafers, but fundamentally speaking, the existence of some microscopic defects inside single crystal silicon is restricted by the current crystal pulling process. When single crystal silicon rods are sliced ​​into single crystal silicon wafers , these internal micro-defects will appear as micro-defects on the surface of the single crystal silicon wafer. During the epitaxy process, the temperature is as high as thousands of degrees Celsius. The high-temperature vapor deposition process will amplify or make up for the microscopic defects. Particle defects (COP), scratches, large particles (Area count) and other surface defects, in order to prepare qualified epitaxial silicon wafers, it is necessary to improve the epitaxial process conditions, and make up for the surface defects of silicon wafers through epitaxy to the greatest extent

Method used

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  • A Method for Eliminating the Agglomeration of Microparticles on the Surface of 12-Inch Monocrystalline Silicon Epitaxial Wafer
  • A Method for Eliminating the Agglomeration of Microparticles on the Surface of 12-Inch Monocrystalline Silicon Epitaxial Wafer
  • A Method for Eliminating the Agglomeration of Microparticles on the Surface of 12-Inch Monocrystalline Silicon Epitaxial Wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Put the cleaned 12-inch monocrystalline silicon polished wafer into the silicon wafer storage chamber of the epitaxial furnace, and at a temperature of 1190°C, pass HCl gas to clean the reaction chamber and the base of the epitaxial furnace, cool down to 800°C, and place the silicon wafer delivered to the base of the reaction chamber, H 2 Flow is 30SLM. Raise the temperature of the reaction chamber to 1100 °C, H 2 Increase the flow rate to 100SLM for 1min, then cool down to the deposition temperature of 1080°C; pre-flow TCS gas, dopant B 2 h 6 / PH 3 For at least 1 min, inject TCS gas to grow a thin epitaxial layer, the flow rate of TCS is 20g / min, the input time is 10s, H 2 The flow rate is maintained at 100SLM, and then TCS and dopant B are introduced 2 h 6 / PH 3 , grow an epitaxial layer on the surface of a 12-inch single crystal silicon polished wafer. After the growth of the epitaxial layer is completed, cool down to 900°C, take out the epitaxial wafer, and u...

Embodiment 2

[0027] Put the cleaned 12-inch monocrystalline silicon polished wafer into the silicon wafer storage chamber of the epitaxial furnace, and at a temperature of 1190°C, pass HCl gas to clean the reaction chamber and the base of the epitaxial furnace, cool down to 800°C, and place the silicon wafer delivered to the base of the reaction chamber, H 2 Flow is 30SLM. Raise the temperature of the reaction chamber to 1100 °C, H 2 Increase the flow rate to 100SLM for 1min, then cool down to the deposition temperature of 1080°C; pre-flow TCS gas, dopant B 2 h 6 / PH 3 For at least 1min, feed TCS gas to grow a thin epitaxial layer, TCS flow rate is 20g / min, feed time is 10s, adjust H 2 Flow to 40SLM, then pass into TCS and dopant B 2 h 6 / PH 3 , grow an epitaxial layer on the surface of a 12-inch single crystal silicon polished wafer. After the growth of the epitaxial layer is completed, cool down to 900°C, take out the epitaxial wafer, and use the KT SP1 instrument to test the surf...

Embodiment 3

[0029] Put the cleaned 12-inch monocrystalline silicon polished wafer into the silicon wafer storage chamber of the epitaxial furnace, and at a temperature of 1190°C, pass HCl gas to clean the reaction chamber and the base of the epitaxial furnace, cool down to 800°C, and place the silicon wafer delivered to the base of the reaction chamber, H 2 Flow is 30SLM. Raise the temperature of the reaction chamber to 1100 °C, H 2 Increase the flow rate to 100SLM, feed HCl gas, the flow rate is 1L / min, and the time is 1min. After the surface treatment of the silicon wafer is completed, use high-purity hydrogen to purge to drive away HCl and by-products, and at the same time cool down to the deposition temperature of 1080°C; Flow TCS gas, dopant B 2 h 6 / PH 3 For at least 1min, feed TCS gas to grow a thin epitaxial layer, TCS flow rate is 20g / min, feed time is 10s, adjust H 2 Flow to 100SLM, then pass into TCS and dopant B 2 h 6 / PH 3 , grow an epitaxial layer on the surface of a...

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Abstract

A method for eliminating micro particle aggregation on the surface of a 12-inch monocrystalline silicon epitaxial wafer comprises the following steps: (1) cleaning the surface of a polished monocrystalline silicon wafer; (2) cleaning an epitaxial furnace cavity and a silicon wafer reaction base by using HCl gas; (3) loading the polished monocrystalline silicon wafer onto the base, wherein the flow of hydrogen fed into the reaction cavity is 30 SLM; heating the reaction cavity to 1050-1150 DEG C, increasing the flow of the hydrogen to 100-160 SLM, and meanwhile, feeding HCl gas to corrode the surface of the monocrystalline silicon, wherein the concentration of the HCl / H2 is controlled to be 0.5-1.5% and the corroding time is 30-180 s; (4) stopping feeding the HCl gas, blowing out the HCl gas and byroducts by using the high-purity hydrogen, and cooling to the deposition temperature of 1050-1100 DEG C; (5) pre-fluidizing TCS gas and a dopant B2H6 / PH3 for at least 1 minute, feeding the TCS gas to grow an epitaxial thin layer, then decreasing the flow of the hydrogen by 20-60 SLM, and growing an epitaxial layer on the surface of the monocrystalline silicon; (6) cooling to 900 DEG C, and taking out the epitaxial wafer. By the method, micro particle aggregation on the surface of the 12-inch monocrystalline silicon epitaxial wafer can be eliminated and the producing qualified rate of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to a method for eliminating microparticle aggregation on the surface of a 12-inch single crystal silicon epitaxial wafer, belonging to the technical field of silicon wafer processing. Background technique [0002] In recent years, epitaxial silicon wafers have gradually developed to large sizes. Internationally, large-sized epitaxial silicon wafers have reached 12 inches, or even 18 inches. Epitaxial silicon wafers have just started and have broad application prospects. With the increase in the size of single crystal silicon wafers, the internal defects of single crystal silicon and the surface defects caused by subsequent processing also increase. In order to obtain polished silicon wafers with good surface conditions and fewer defects, it is necessary to improve the subsequent polishing or annealing process. Further improve the surface state of silicon wafers and improve the surface quality of polished silicon wafers, but funda...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 赵而敬冯泉林李宗峰闫志瑞库黎明盛方毓王永涛葛钟
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD