Unlock instant, AI-driven research and patent intelligence for your innovation.

Thick aluminum etching polymer removing method

An aluminum etching and polymer technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as aluminum corrosion, achieve the effect of increasing the corrosion window and avoiding the reaction being corroded

Inactive Publication Date: 2015-05-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After metal Al etch, Cl 2 are easily hidden in the polymer of the metal sidewall, and the Cl 2 Will react with Al to form AlCl 3 , and then undergoes a self-circulation reaction with the moisture in the air to re-release Cl 2 , resulting in severe corrosion of aluminum

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thick aluminum etching polymer removing method
  • Thick aluminum etching polymer removing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, now in conjunction with the accompanying drawings, the details are as follows:

[0014] The polymer removal method in the thick aluminum etching process of this embodiment is mainly used in the etching process of metal aluminum with a thickness above 12K. In this method, during the metal degumming process, the CF-containing 4 The water vapor of the gas removes most of the polymer on the metal sidewall, and then a subsequent single wet cleaning completely removes the remaining polymer on the metal sidewall.

[0015] Among them, CF 4 The gas treatment conditions are as follows: temperature 250°C±50°C, air pressure 2T±0.5T, power 1400W±200W, gas H 2 O(500±100sccm) and CF 4 (60±20sccm) mixed gas.

[0016] use CF 4 After gas treatment, the polymer on the metal sidewall is basically removed, such as figure 2 shown. This increases the corrosion...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thick aluminum etching polymer removing method. The thick aluminum etching polymer removing method is applied to the etching process of metal aluminum with a thickness of higher than 12 K. The method comprises, after the metal aluminum is etched, feeding the mixed gas of CF4 gas and water vapor into a photoresist removing cavity to remove photoresist and meanwhile to remove most of polymer on a metal side wall; subsequently, performing wet cleaning once to completely remove the polymer residue on the metal side wall. According to the thick aluminum etching polymer removing method, by adding the CF4 gas during a metal photoresist removing process and by means of subsequent single wet etching and single dry etching, the polymer on the metal side wall can be completed removed, so that etching windows of the metal aluminum can be added, and meanwhile, the metal aluminum can avoid being corroded due to reaction with Cl2 in the polymer on the metal side wall.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a polymer removal method in a thick aluminum etching process. Background technique [0002] In the existing thick aluminum etching process, due to the long etching time and the thick photoresist used, the residual polymer on the metal sidewall is very thick, such as figure 1 shown. At present, the method of etching is usually used to remove the polymer of the metal sidewall. However, even using multiple wet and dry etchs, the polymer cannot be effectively removed. [0003] Cl 2 It is an etching gas commonly used in metal aluminum etching process. After metal Al etch, Cl 2 are easily hidden in the polymer of the metal sidewall, and the Cl 2 Will react with Al to form AlCl 3 , and then undergoes a self-circulation reaction with the moisture in the air to re-release Cl 2 , causing serious corrosion of aluminum. [0004] The chemical reaction principle of alum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
CPCH01L21/31138H01L21/31133
Inventor 徐鹏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP