Method for reducing electric leakage of trench gate structure semi-floating gate device

A technology of semi-floating gate devices and trench gates, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as current flow, leakage, and residual silicon on the sidewall of the oxide layer in the field, so as to reduce leakage and cost controllable effect

Inactive Publication Date: 2015-05-06
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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Problems solved by technology

[0007] However, although the semi-floating gate device in the above-mentioned invention patent application can increase the channel length through the U-shaped channel, reduce the unit area, and increase the chip density, due to the structure in the process of forming the U-shaped channel, it will cause

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  • Method for reducing electric leakage of trench gate structure semi-floating gate device
  • Method for reducing electric leakage of trench gate structure semi-floating gate device
  • Method for reducing electric leakage of trench gate structure semi-floating gate device

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[0033] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0034] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly represent the structure of the present invention and facilitate the description, the structures in the accompanying drawings are not drawn according to the general scale, and the Due to partial enlargement, deformation and simplification, the size of the structure shown does not represent the actual size. Also, the appended drawings are schematic illustrations of idealized embodiments of the present invention, and illustrated embodiments of the present invention should not be construed as limited to the specific shapes of the regions shown in the drawings, but rather include resulting shapes, such as those resulting from manufacture deviation, etc. For example, the curves obta...

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Abstract

The invention discloses a method for reducing electric leakage of a trench gate structure semi-floating gate device. The method includes the step of performing oxidation treatment on silicon remaining at the position close to a field oxide layer side wall in a trench gate channel region during trench etching to form a side wall sacrificial oxide layer with an insulating effect, thereby preventing the current from flowing in the direction of the silicon remaining in the side wall, enabling the current to flow in the direction of a trench-shaped channel of the device and reducing the phenomenon of electric leakage between a source region and a drain region. The method for reducing electric leakage of the trench gate structure semi-floating gate device can be integrated with existing processes and is controllable in cost.

Description

technical field [0001] The present invention relates to the technical field of semiconductor memory, and more particularly, relates to a method for reducing electric leakage of semi-floating gate devices with trench gate (Trench Gate) structure by means of oxidation. Background technique [0002] As one of the basic core chips of electronic products, memory is widely used in various electronic products including mobile phones and mobile handheld products. Among them, the semi-floating gate device, as a new type of storage device, can be applied to different integrated circuits. [0003] Semi-floating gate memory can replace a portion of static random access memory (SRAM). Traditional SRAM requires 6 MOSFET transistors to form a storage unit, which has low integration and occupies a large area. The semi-floating gate transistor can form a storage unit with a single transistor, and its storage speed is close to that of a traditional SRAM storage unit composed of 6 transistor...

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Application Information

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IPC IPC(8): H01L21/335H01L21/8247
CPCH01L29/42336H01L29/42364
Inventor 庄翔孙德明王全
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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