Method for integrating power device and control device

Abstract

The invention relates to the field of the integrated circuit manufacturing technology, particularly to a method for integrating a power device and a control device. According to the method for integrating the power device and the control device, a power chip and a control chip can be designed and manufactured in mutual independence to ensure the advantages in performance and cost; meanwhile, a control circuit and chip devices can be connected without wiring and common packaging; through thinning sharing and by means of a back metal process, the manufacturing cost can be further reduced, and meanwhile the performance of the power device can be enhanced; by thickening the metal of the back drain electrode of the power device, the on-resistance of the devices can be further reduced; besides, the heat dissipating performance is enhanced through metal re-wiring, by stopping silicon through vias in the metal layer of the power chip, the height-width ratio of the silicon through vias can be reduced, and the process implementing difficulty can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for integrating power devices and control devices. Background technique [0002] Field Effect Transistors (FETs) are widely used in various electronic circuits. It is a voltage-controlled semiconductor device. It has the advantages of high input resistance (107~1015Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and wide safe working area. It has become a powerful bipolar transistor and power transistor. competitor. The manufacturing process of the control device of the field effect tube is completely different from that of the field effect tube. However, the work of the field effect tube depends on the connection of the control device. Therefore, obtaining the field effect transistor and its control device at the same time has become a technical difficulty in this field. [0003] At ...

AI Technical Summary

Problems solved by technology

However, this solution needs to place the source region of the device on the back of the silicon wafer, which is inconsistent with the conventional vertical power device where the source region of the device is placed on the front of the silicon wafer, so the existing vertical power devices cannot be applied to this solution.

And multiple chips are spread out and connected on the plane, occupying a large area

[0006] The single-chip solution is to integrate the power device and the control device in the same chip through special chip design and production. The entire process is the sum of the processes of the two devices. The device has undergone unnecessary processes and the cost is high.

Moreover, the performance compatibility of power devices and control devices is not strong, which affects the optimization of the performance of both devices

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