Method for improving the adhesion of plated metal layers to silicon

A technology of metal plating and metal contact, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as module efficiency drops to failure, poor adhesion, etc.

Inactive Publication Date: 2015-05-06
INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW) +1
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there is poor adhesion between the metal stack (including bus bars and soldered striplines) and the silicon substrate, electrical contact can degrade and module efficiency can drop to failure levels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving the adhesion of plated metal layers to silicon
  • Method for improving the adhesion of plated metal layers to silicon
  • Method for improving the adhesion of plated metal layers to silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Detailed description of the preferred embodiment

[0029] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the disclosure and how it may be practiced in certain embodiments. However, it is understood that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures and techniques have not been described in detail so as not to obscure the present disclosure. Although the present disclosure will be described with respect to particular embodiments and with reference to certain drawings, the present disclosure is not limited thereto. The drawings included and described herein are schematic and do not limit the scope of the present disclosure. It should also be noted that in the drawings, the size of some of the elements may be exaggerated for illustrative purposes and therefore not drawn on scale.

[0030] In addition, the terms firs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method is disclosed for fabricating photovoltaic cells, the method comprising providing plated metal contacts with a contact pattern comprising a plurality of fingers and at least one first pinning element at the free ends of each of the plurality of fingers; and associated photovoltaic cells.

Description

technical field [0001] The disclosed technology relates to methods for improving the adhesion of plated metal layers (eg, copper plated contacts) to silicon. This method can be advantageously used to improve the adhesion of metallized contacts of silicon photovoltaic cells. Background technique [0002] New concepts and manufacturing processes for silicon photovoltaic cells are being developed in view of their realization in a production environment. An example of such a development towards industrial production is the use of a plating process to form metal contacts as an alternative to the screen printing process. [0003] A typical process flow using plating (for example, for front-side metallization of silicon photovoltaic cells) involves providing a dielectric layer, such as an anti-reflective coating, on the entire front surface, and subsequently removing the anti-reflective coating locally, The underlying silicon surface is thereby exposed where it is desired to prov...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0224
CPCH01L31/0504H01L31/022433H01L31/18Y02E10/50
Inventor R·拉塞尔L·图斯
Owner INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap