Operating voltage control circuit and method and memorizer

Abstract

The invention discloses an operating voltage control circuit and method and a memorizer. The control circuit comprises a boosting unit, a dividing unit, a comparing unit, a control unit and an output unit, wherein the boosting unit conducts boosting processing when receiving a first signal to output a boosting voltage and stops boosting processing when receiving a second signal, and the output boosting voltage is maintained at a current value; the dividing unit is used for conducting dividing processing on the boosting voltage to output a dividing voltage which comprises multiple different dividing coefficients; the comparing unit is used for comparing the dividing voltage with a reference voltage, outputting the first signal when the dividing voltage is smaller than the reference voltage and outputting the second signal when the dividing voltage is larger than the reference voltage; the control unit is used for conducting switching control over at least a part of the dividing coefficients from large to small till the boosting voltage reaches a target voltage; the output unit is used for outputting the boosting voltage. According to the operating voltage control circuit and method and the memorizer, on the basis of effectively controlling the establishing speed of an operating voltage, the influences on the power and performance of a device due to a threshold voltage and changes of the threshold voltage in the using process are eliminated.

Description

technical field [0001] The present invention relates to the technical field of semiconductor memory, in particular to an operating voltage control circuit, a control method thereof, and a memory. Background technique [0002] In recent years, during the rapid development of semiconductor memory, advanced memory such as DRAM, EFPROM, and FLASH has the advantages of high density, low power consumption, and low price, and it has become a storage device commonly used in computers and mobile communication terminals. Based on the requirements of low power consumption and low cost, the power supply voltage of the memory is usually relatively low, such as 2.5V, 1.8V, etc. programming voltage and erasing voltage, such as 8V or 12V. Therefore, the charge pump circuit is widely used in the memory, and is used for obtaining higher programming voltage, erasing voltage and other operating voltages of the memory through a lower power supply voltage. [0003] When a higher operating volta...

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Problems solved by technology

[0013] 2) During use (such as: after several times of erasing), the threshold voltage Vth1 of the NMOS transistor N will change, which will cause the erasing voltage VEP to deviate from the target value, thereby affecting the performance of the device

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