High-power IGBT (insulated gate bipolar transistor) redundantly-actuated protective circuit
A driving protection circuit, driving circuit technology, applied in the direction of output power conversion devices, electrical components, etc., can solve problems such as malfunction, affecting the performance of IGBT driving circuits, etc., to prevent misdirection, high reliability, and strong anti-interference. Effect
Inactive Publication Date: 2015-05-20
STATE GRID CORP OF CHINA +2
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Problems solved by technology
In order to improve the working reliability of the IGBT, avoid malfunction when the IGBT is turned off and on, or affect the performance of the IGBT drive circuit when the surge current is generated, it is necessary to design a redundant drive protection circuit for the IGBT with a reasonable structure
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Embodiment Construction
[0012] See figure 1 , a high-power IGBT redundant drive protection circuit, including a charging circuit, a drive circuit, a redundant drive circuit, a switching tube unit, an overcurrent and short circuit protection circuit, an overvoltage protection detection circuit, a temperature monitoring and protection circuit, a charging circuit, The drive circuit, the switch tube unit, the overcurrent and short circuit protection circuit, the overvoltage protection detection circuit, and the temperature monitoring and protection circuit are respectively connected to the IGBT power device. The redundant drive circuit is connected to the switch tube unit, and the switch tube unit is connected to the The gates of the IGBT power devices are connected, and the switch tube unit is connected with the negative bias voltage of the drive circuit.
[0013] The working process of this device is: when the drive signal is high level, the drive circuit controls the IGBT to turn on, and the redundant...
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The invention relates to a high-power IGBT (insulated gate bipolar transistor) redundantly-actuated protective circuit comprising a charge circuit, a drive circuit, a switch tube unit, an overcurrent and short circuit protective circuit, an overvoltage protective detecting circuit and a temperature monitoring and protective circuit, all connected with an IGBT power device. The drive circuit is connected with the switch tube unit; the switch tube unit is connected with a gate of the IGBT power device; the switch tube unit is further connected with the drive circuit. The high-power IGBT redundantly-actuated protective circuit has the advantages that surge current can be quickly released, gate voltage is lowered, IGBT mistaken turn-on is prevented, effective protective measures are taken for overvoltage, overcurrent, overheating and the like, operational safety and reliability of the IGBT can be guaranteed, the requirement for IGBT protection is met, stability is good, interference resistance is high, reliability is high, and the service life of the circuit is long.
Description
technical field [0001] The invention relates to a high-power IGBT redundant drive protection circuit. Background technique [0002] The dynamic var generator SVG (Static Var Generator) is a reactive power compensation device that has developed rapidly in recent years. It is a controllable voltage source inverter composed of fully-controlled converter devices, which can continuously and quickly provide Capacitive reactive power and inductive reactive power play a role in dynamic reactive power generation, reactive power compensation, voltage support, and improvement of system stability in power systems. [0003] In SVG devices, IGBT power devices have gradually replaced thyristors or GTOs due to their simple control and drive circuits, high operating frequency, and large capacity. IGBT integrates the advantages of bipolar power transistor and power MOSFET, and has the advantages of voltage control, large input impedance, low driving power, simple control circuit, small switc...
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IPC IPC(8): H02M1/08
CPCH02M1/32H02M1/325H02M1/327
Inventor 吕跃青吕明君刘凤珍刘建国赵玉波
Owner STATE GRID CORP OF CHINA