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A method for preparing independent metal nanoribbons

A technology of metal nano and metal, which is applied in the field of preparation of independent metal nanobelts, can solve the problems of complex preparation process and unsuitability for metal nanobelts, and achieve the effects of simple process, low equipment price and low preparation temperature

Inactive Publication Date: 2017-04-12
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method prepares independent gold nanobelts, the preparation process is complicated, and Fe–Au2.3.%Au eutectoid alloys need to be smelted at high temperature, and the requirements for alloy composition are strict, and only a single type of gold nanobelts can be prepared. ribbon, not suitable for the preparation of other metal nanoribbons

Method used

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  • A method for preparing independent metal nanoribbons
  • A method for preparing independent metal nanoribbons
  • A method for preparing independent metal nanoribbons

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Preparation of oxalic acid solution: Weigh 5g of solid oxalic acid with an electronic balance and put it into a small beaker, then measure 95ml of deionized water into the beaker, stir with a glass rod until the solid disappears, and obtain a 5% aqueous solution of oxalic acid .

[0024] Cleaning of monocrystalline silicon wafers: Put the cut monocrystalline silicon wafers into a beaker, add acetone, ultrasonically clean them for 5 minutes, take them out, rinse them with absolute alcohol, and let them dry naturally.

[0025] To grow oxalic acid templates on monocrystalline silicon wafers: take a reaction vessel of appropriate size, pour the prepared oxalic acid solution with a mass concentration of 5%, put the cleaned and dried monocrystalline silicon wafers into the oxalic acid solution, and after 10 minutes Take it out, let it dry naturally, and you can get strips of oxalic acid on the single crystal silicon wafer. Put the oxalic acid powder on the monocrystalline si...

Embodiment 2

[0029] Preparation of oxalic acid solution: use alcohol as a solvent to prepare an alcohol solution of oxalic acid with a concentration of 10%.

[0030] Clean the single crystal alumina sheet: Put the single crystal alumina sheet into a beaker, add acetone, ultrasonically clean it for 5 minutes, take it out, rinse it with absolute alcohol, and let it dry naturally.

[0031] To grow oxalic acid template on single crystal alumina sheet: take a reaction vessel of appropriate size, pour the prepared oxalic acid alcohol solution with a mass concentration of 10%, put the cleaned and dried single crystal alumina sheet into the oxalic acid solution, five Take it out after one day, let it dry naturally, and you can get strip-shaped oxalic acid on the single-crystal alumina sheet. The morphology of the resulting strip-shaped oxalic acid template is shown in Figure 7 .

[0032] Silver coating on the oxalic acid template grown on the single crystal alumina substrate: the oxalic acid te...

Embodiment 3

[0034] Preparation of citric acid solution: look up the solubility data of citric acid, and prepare a supersaturated solution of citric acid at room temperature with deionized water.

[0035] Cleaning of monocrystalline silicon wafers: Put the cut monocrystalline silicon wafers into a beaker, add acetone, ultrasonically clean them for 5 minutes, take them out, rinse them with absolute alcohol, and let them dry naturally.

[0036] To grow a citric acid template on a single crystal silicon wafer: take a reaction vessel of an appropriate size, pour it into the prepared citric acid supersaturated solution, and put the cleaned and dried single crystal silicon wafer into the citric acid supersaturated solution for 1 hour Then take it out, let it dry naturally, and you can get strip-shaped citric acid on the monocrystalline silicon wafer.

[0037] Platinum coating on the citric acid template grown on the single crystal silicon wafer: the citric acid template grown on the single cryst...

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PUM

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Abstract

The invention discloses a method for preparing an independent metal nanoribbon, relating to the technical field of nanometer materials. The method comprises the following steps: crystallizing on a monocrystalline silicon wafer or a single crystal alumina wafer or other crystalline matrixes to generate a strip-shaped template by utilizing oxalic acid and other template solutions; plating metals onto the strip-shaped template by adopting a vacuum coating process; dissolving and removing the strip-shaped template by using a solvent, thereby obtaining the independent metal nanoribbon. The method disclosed by the invention is simple in process and is suitable for preparing multiple metal nanoribbons; and moreover, the prepared metal nanoribbon is controllable in thickness, the needed equipment is low in price, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing an independent metal nanobelt. The prepared metal nanobelt can be used to prepare metal electrodes for micro / nano devices, or as a sample for studying the properties of nanomaterials. Background technique [0002] One-dimensional metal nanostructures, such as nanowires, nanorods, nanotubes or nanoribbons, are key components for fabricating nanodevices. In particular, nanoribbons can be used as samples to study size-limited transport phenomena; they can also be used to prepare functional devices along the direction of nanoribbons, including electrical, chemical, physical and thermal functional devices. [0003] Nanomaterials have large surface areas and should behave very differently from bulk materials. Many researchers study the properties of nanoribbons theoretically, but the data of experimental research results are still very scattered...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/00B82Y40/00
Inventor 徐春花李平王俊鹏刘玉亮敖宁吴文斌赵旭张柯柯张建欣徐申生
Owner HENAN UNIV OF SCI & TECH
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